P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

TRANSISTORS

Features: ■ P-Channel Versatility ■ Compact Plastic Package ■ Fast Switching ■ Low Drive Current ■ Ease of Paralleling ■ Excellent Temperature Stability

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -10A@ TC=25℃ · Drain Source Voltage -VDSS=-60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.4Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

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Trans MOSFET P-CH 60V 10A 3-Pin(3+Tab) TO-220AB

24 AWG stranded (7x32) tinned copper conductors, conductors cabled

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RS-232, #24-3c, SR-PVC, O/A Foil, PVC Jkt, CMG

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MACHINE SCREW PAN PHILLIPS 10-32

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Step down DC/DC converter Controller for NOTE PC

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Switching Regulators for DDR-SDRAM Cores

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