Surface Mount

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It prov

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Raging • Repetitive Avalanche

Power MOSFET

Surface-mount\nAvailable in tape and reel\nDynamic dV/dt rating;

HEXFET Power MOSFET

Power MOSFET

文件：180.24 Kbytes Page：9 Pages

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Raging • Repetitive Avalanche

Power MOSFET

Power MOSFET

文件：180.24 Kbytes Page：9 Pages

Power MOSFET

文件：201.59 Kbytes Page：9 Pages

Power MOSFET

文件：201.59 Kbytes Page：9 Pages

Power MOSFET

文件：201.59 Kbytes Page：9 Pages

AV Coupler Receiver

Overview The LA9520V is a receiver IC developed for free-space infrared transmission of stereo audio and video signals. It integrates all the required functions for reception, including I/V conversion for the received signal, a preamplifier, ALC, audio signal demodulation, and video signal demodu

Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● 175°C Opereting Temperature ● Extended Safe Operating Area ● Lower Leakage Current : -10 µA (Max.) @ VDS = -100V ● Low RDS(ON) : 0.444 Ω (Typ.)

Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ● Lower RDS(ON) : 0.206 Ω (Typ.)

Advanced Power MOSFET

文件：228.12 Kbytes Page：7 Pages

Advanced Power MOSFET

文件：228.12 Kbytes Page：7 Pages