HEXFET짰Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized design, low on-resistance and cost-effectiveness. • Dynamic dv/dt Raging • Repetitive Avalanche Rated • P-Channel • 175°C Operating Temperature • Fas

HEXFET®Power MOSFET

Power MOSFET

文件：159.1 Kbytes Page：8 Pages

Power MOSFET

文件：159.1 Kbytes Page：8 Pages

AV Coupler Receiver

Overview The LA9520V is a receiver IC developed for free-space infrared transmission of stereo audio and video signals. It integrates all the required functions for reception, including I/V conversion for the received signal, a preamplifier, ALC, audio signal demodulation, and video signal demodu

Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● 175°C Opereting Temperature ● Extended Safe Operating Area ● Lower Leakage Current : -10 µA (Max.) @ VDS = -100V ● Low RDS(ON) : 0.444 Ω (Typ.)

Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ● Lower RDS(ON) : 0.206 Ω (Typ.)

Advanced Power MOSFET

文件：228.12 Kbytes Page：7 Pages

Advanced Power MOSFET

文件：228.12 Kbytes Page：7 Pages