Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

采用 TO-220 封装的 -100V 单 P 通道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n• P 通道MOSFET;

Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

HEXFET POWER MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

采用 D2-Pak 封装的 -100V 单 P 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n• P 通道MOSFET;

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Advanced Process Technology

文件：166.41 Kbytes Page：11 Pages

ADVANCED PROCESS TECHNOLOGY

文件：165.67 Kbytes Page：9 Pages

ADVANCED PROCESS TECHNOLOGY

文件：165.67 Kbytes Page：9 Pages

Advanced Process Technology

文件：166.41 Kbytes Page：11 Pages

ADVANCED PROCESS TECHNOLOGY

文件：424.17 Kbytes Page：11 Pages

ADVANCED PROCESS TECHNOLOGY

文件：424.17 Kbytes Page：11 Pages

Advanced Process Technology

文件：166.41 Kbytes Page：11 Pages

ADVANCED PROCESS TECHNOLOGY

文件：424.17 Kbytes Page：11 Pages

AV Coupler Receiver

Overview The LA9520V is a receiver IC developed for free-space infrared transmission of stereo audio and video signals. It integrates all the required functions for reception, including I/V conversion for the received signal, a preamplifier, ALC, audio signal demodulation, and video signal demodu

Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● 175°C Opereting Temperature ● Extended Safe Operating Area ● Lower Leakage Current : -10 µA (Max.) @ VDS = -100V ● Low RDS(ON) : 0.444 Ω (Typ.)

Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ● Lower RDS(ON) : 0.206 Ω (Typ.)

Advanced Power MOSFET

文件：228.12 Kbytes Page：7 Pages

Advanced Power MOSFET

文件：228.12 Kbytes Page：7 Pages