P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

-5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs

Description These devices are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for

HEXFET POWER MOSFETS

Video Triax, RG11, #15 Stranded, CSPE Jacket

Product Description 15 AWG stranded (19x27) .064 bare copper conductor, foam HDPE insulation, paper tape separator, bare copper braid shields (90 and 80 coverage), CSPE - Chlorosulphonated Polyethylene jacket.

Surface strain sensor Highly sensitive, -600 … 600 με

802.11b/g/n WLAN PA/LNA/RF Switch 2400 - 2500 MHz

PRODUCT DESCRIPTION The ANADIGICS AWL9232 is a high performance InGaP HBT power amplifier, low-noise amplifier and RF switch integrated on a single IC. It is particularly applicable in consumer electronics products (e.g., cell phones, MP3 players, cameras, etc.) that integrate 802.11b/g WLAN in t

Dual 18/16/14-Bit 1.1MSPS ZDS A/D Converter

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UL94V-0 PBT impeller & frame

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