P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -15A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

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Set SlimLine with Integrated, Single-Component SlimLine Shear Force Sensor

SMD 28 Pin Passive Delay Lines

SMD 28 Pin Passive Delay Lines

RF AMPLIFIER MODEL

文件：88.02 Kbytes Page：1 Pages

6C 16 AWG 19/.0117 TC PVC / OAS / PVC

文件：71.17 Kbytes Page：1 Pages

RF AMPLIFIER MODEL

文件：88.02 Kbytes Page：1 Pages