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型号 功能描述 生产厂家 企业 LOGO 操作
IRF841FI

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Rugged Gate Oxide Technology

ISC

无锡固电

IRF841FI

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

STMICROELECTRONICS

意法半导体

N-CHANNEL POWER MOSFETS

FEATURES • Lower RDS(ON) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operation area • Improved high temperature reliability

SAMSUNG

三星

N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

MOTOROLA

摩托罗拉

PIN PHOTODIODE

Description Large area planar silicon photodiode mounted on a two lead PC board substrate. A clear molded lens is used to increase sensitivity. Low junction capacitance permits fast response time. Features • High photo sensitivity • Low junction capacitance • High cut-off frequency • Fast sw

UOT

东贝光电

PIN PHOTODIODE

Description Large area planar silicon photodiode mounted on a two lead PC board substrate. A clear molded lens is used to increase sensitivity. Low junction capacitance permits fast response time. Features • High photo sensitivity • Low junction capacitance • High cut-off frequency • Fast sw

UOT

东贝光电

TO-220 8A Triac

文件:58.07 Kbytes Page:2 Pages

SANKEN

三垦

更新时间:2026-5-19 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FSC
23+
NA
6500
全新原装假一赔十
IR
24+/25+
2000
原装正品现货库存价优
INTREC
23+
NA
2486
专做原装正品,假一罚百!
IR
24+
SOT-223
59
IR
23+
65480
INR
23+
TO-3
5000
原装正品,假一罚十
IR
23+
TO-220
8000
只做原装现货
IR
23+
TO-220
7000
INR
23+
TO-3
44353
##公司主营品牌长期供应100%原装现货可含税提供技术
IR
17+
TO-220
31518
原装正品 可含税交易

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