IRF840A价格

参考价格:¥20.7380

型号:IRF840A 品牌:Vishay 备注:这里有IRF840A多少钱,2025年最近7天走势,今日出价,今日竞价,IRF840A批发/采购报价,IRF840A行情走势销售排行榜,IRF840A报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF840A

Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)

HEXFET® Power MOSFET VDSS Rds(on) max ID 500V 0.85Ω 8.0A Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved G

IRF

IRF840A

Power MOSFET

Power MOSFET VDSS =500V, RDS(on) = 0.85 ohm, ID = 8.0 A N Channel

TEL

东电电子

IRF840A

Power MOSFET

FEATURES • Low Gate Charge QgResults in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective CossSpecified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

VishayVishay Siliconix

威世科技威世科技半导体

IRF840A

Uninterruptable Power Supply

Applications ● Switch Mode Power Supply ( SMPS ) ● Uninterruptable Power Supply ● High speed power switching Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche

KERSEMI

IRF840A

Power MOSFET

文件:287.12 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

IRF840A

Power MOSFET

文件:162.77 Kbytes Page:8 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

VishayVishay Siliconix

威世科技威世科技半导体

Power MOSFET

Power MOSFET VDSS =500V, RDS(on) = 0.85 ohm, ID = 8.0 A N Channel

TEL

东电电子

Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)

Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptible Power Supply ● High Speed Power Switching Benefits ● Low Gate Charge Qg Results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Vo

IRF

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche, and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www

VishayVishay Siliconix

威世科技威世科技半导体

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

VishayVishay Siliconix

威世科技威世科技半导体

Power MOSFET

FEATURES • Low Gate Charge QgResults in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective CossSpecified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

VishayVishay Siliconix

威世科技威世科技半导体

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

VishayVishay Siliconix

威世科技威世科技半导体

Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)

Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptible Power Supply ● High Speed Power Switching Benefits ● Low Gate Charge Qg Results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Vo

IRF

Power MOSFET

Power MOSFET VDSS =500V, RDS(on) = 0.85 ohm, ID = 8.0 A N Channel

TEL

东电电子

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche, and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www

VishayVishay Siliconix

威世科技威世科技半导体

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche, and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www

VishayVishay Siliconix

威世科技威世科技半导体

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

VishayVishay Siliconix

威世科技威世科技半导体

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

VishayVishay Siliconix

威世科技威世科技半导体

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

VishayVishay Siliconix

威世科技威世科技半导体

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

VishayVishay Siliconix

威世科技威世科技半导体

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

VishayVishay Siliconix

威世科技威世科技半导体

Power MOSFET

文件:287.12 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Power MOSFET

文件:162.77 Kbytes Page:8 Pages

VishayVishay Siliconix

威世科技威世科技半导体

SMPS MOSFET HEXFET짰 Power MOSFET

文件:667.17 Kbytes Page:10 Pages

IRF

Power MOSFET

文件:234.01 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技威世科技半导体

SMPS MOSFET HEXFET짰 Power MOSFET

文件:667.17 Kbytes Page:10 Pages

IRF

Power MOSFET

文件:162.77 Kbytes Page:8 Pages

VishayVishay Siliconix

威世科技威世科技半导体

SMPS MOSFET

文件:182.03 Kbytes Page:8 Pages

IRF

Power MOSFET

文件:162.77 Kbytes Page:8 Pages

VishayVishay Siliconix

威世科技威世科技半导体

SMPS MOSFET HEXFET짰 Power MOSFET

文件:667.17 Kbytes Page:10 Pages

IRF

isc N-Channel MOSFET Transistor

文件:372.97 Kbytes Page:2 Pages

ISC

无锡固电

SMPS MOSFET HEXFET짰 Power MOSFET

文件:667.17 Kbytes Page:10 Pages

IRF

Power MOSFET

文件:234.01 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技威世科技半导体

SMPS MOSFET HEXFET짰 Power MOSFET

文件:667.17 Kbytes Page:10 Pages

IRF

Power MOSFET

文件:234.01 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Power MOSFET

文件:234.01 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Surface Mount Zener Diodes

Features ● lat Handling Surface for Accurate Placement ● tandard Zener Breakdown Voltage Range -3.3V to 68V ● ow Profile Package

KEXIN

科信电子

8A 500V N-channel Enhancement Mode Power MOSFET

文件:1.63311 Mbytes Page:12 Pages

WXDH

东海半导体

9Amps竊?00V N-CHANNEL MOSFET

文件:122.87 Kbytes Page:5 Pages

KIA

可易亚半导体

8A竊?00V N-CHANNEL MOSFET

文件:215.89 Kbytes Page:6 Pages

KIA

可易亚半导体

8A 500V N-CHANNEL MOSFET

文件:242.9 Kbytes Page:7 Pages

KIA

可易亚半导体

IRF840A产品属性

  • 类型

    描述

  • 型号

    IRF840A

  • 功能描述

    MOSFET N-Chan 500V 8.0 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-13 19:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO 263
160888
明嘉莱只做原装正品现货
IR
00+
TO-220
3
一级代理,专注军工、汽车、医疗、工业、新能源、电力
VISHAY/威世
25+
TO-263
32360
VISHAY/威世全新特价IRF840ASTRLPBF即刻询购立享优惠#长期有货
IR
2016+
TO220
6000
只做原装,假一罚十,公司可开17%增值税发票!
VISHAY
22+
TO-220
9800
只做原装正品假一赔十!正规渠道订货!
IR
11+
TO-220
4
北京原装无铅现货
VISHAY/威世
23+
TO-263
22000
原装现货假一罚十
fsc
24+
N/A
6980
原装现货,可开13%税票
IR
23+
TO-220
35890
FCS
24+
TO-220
2987
只售原装自家现货!诚信经营!欢迎来电!

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