IRF840A价格
参考价格：￥20.7380
型号：IRF840A 品牌：Vishay 备注：这里有IRF840A多少钱，2026年最近7天走势，今日出价，今日竞价，IRF840A批发/采购报价，IRF840A行情走势销售排行榜，IRF840A报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF840A | Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) HEXFET® Power MOSFET VDSS Rds(on) max ID 500V 0.85Ω 8.0A Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved G | IRF |   | |
IRF840A | Power MOSFET Power MOSFET VDSS =500V, RDS(on) = 0.85 ohm, ID = 8.0 A N Channel | TEL | | |
IRF840A | Power MOSFET FEATURES • Low Gate Charge QgResults in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective CossSpecified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRF840A | Uninterruptable Power Supply Applications ● Switch Mode Power Supply ( SMPS ) ● Uninterruptable Power Supply ● High speed power switching Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche | KERSEMI | | |
IRF840A | Power MOSFET • Low gate charge Qg results in simple drive requirement\n• Improved gate, avalanche, and dynamic dV/dt ruggedness\n• Fully characterized capacitance and avalanche voltage and current; | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRF840A | Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) | INFINEON 英飞凌 | | |
IRF840A | Power MOSFET | TRANSYS | | |
IRF840A | Power MOSFET 文件：287.12 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRF840A | Power MOSFET 文件：162.77 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET Power MOSFET VDSS =500V, RDS(on) = 0.85 ohm, ID = 8.0 A N Channel | TEL | | ||
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptible Power Supply ● High Speed Power Switching Benefits ● Low Gate Charge Qg Results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Vo | IRF | | ||
Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche, and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low Gate Charge QgResults in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective CossSpecified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET Power MOSFET VDSS =500V, RDS(on) = 0.85 ohm, ID = 8.0 A N Channel | TEL | | ||
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptible Power Supply ● High Speed Power Switching Benefits ● Low Gate Charge Qg Results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Vo | IRF | | ||
Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche, and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche, and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：287.12 Kbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：162.77 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
SMPS MOSFET HEXFET짰 Power MOSFET 文件：667.17 Kbytes Page：10 Pages | IRF | | ||
Power MOSFET 文件：234.01 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
SMPS MOSFET HEXFET짰 Power MOSFET 文件：667.17 Kbytes Page：10 Pages | IRF | | ||
Power MOSFET 文件：162.77 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
SMPS MOSFET 文件：182.03 Kbytes Page：8 Pages | IRF | | ||
Power MOSFET 文件：162.77 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
isc N-Channel MOSFET Transistor 文件：372.97 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
SMPS MOSFET HEXFET짰 Power MOSFET 文件：667.17 Kbytes Page：10 Pages | IRF | | ||
SMPS MOSFET HEXFET짰 Power MOSFET 文件：667.17 Kbytes Page：10 Pages | IRF | | ||
SMPS MOSFET HEXFET짰 Power MOSFET 文件：667.17 Kbytes Page：10 Pages | IRF | | ||
Power MOSFET 文件：234.01 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：234.01 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：234.01 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
| MOTOROLA 摩托罗拉 | | ||
ULTRAFAST RECTIFIERS 8 AMPERES 200-400-600 VOLTS . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • Epoxy Meets U | MOTOROLA 摩托罗拉 | | ||
ULTRAFAST RECTIFIER 8.0 AMPERES 400 VOLTS . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 28 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • Epoxy Meets UL94, VO @ 1/8″ • High T | MOTOROLA 摩托罗拉 | | ||
RF POWER TRANSISTOR NPN SILICON 文件：91.92 Kbytes Page：4 Pages | MOTOROLA 摩托罗拉 | | ||
ULTRAFAST RECTIFIER 8.0 AMPERES 400 VOLTS 文件：107.56 Kbytes Page：6 Pages | MOTOROLA 摩托罗拉 | |
IRF840A产品属性
- 类型
描述
- 漏源电压（Vdss）：
500V
- 栅源极阈值电压（最大值）：
4V @ 250uA
- 漏源导通电阻（最大值）：
850 mΩ @ 4.8A，10V
- 类型：
N 沟道
- 功率耗散（最大值）：
125W
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
25+ |
TO-263 |
22000 |
原装现货假一罚十 |
|||
VISHAY(威世) |
23+ |
N/A |
23500 |
最新到货,只做原装进口 |
|||
vishay |
16+ |
TO-220 |
36000 |
原装正品,优势库存81 |
|||
IR |
14+ |
明嘉莱只做原装正品现货 |
2510000 |
TO-263 |
|||
IR |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
IR |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
VISHAY/威世 |
25+ |
TO-220 |
5715 |
只做原装 有挂有货 假一罚十 |
|||
VISHAY/威世 |
25+ |
TO-263 |
32360 |
VISHAY/威世全新特价IRF840ASTRLPBF即刻询购立享优惠#长期有货 |
|||
vishay |
2020+ |
TO-220 |
22000 |
全新原装正品 现货库存 价格优势 |
|||
VISHAY |
24+ |
N/A |
39800 |
原装正品现货支持实单 |
IRF840A规格书下载地址
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瀚佳科技： 专业销售集成电路IC.单片.内存闪存.二三级管模块等电子元器件.欢迎询价购买。
2018-12-28
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