HEXFET Power MOSFET

Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters for Netcom and Computing Applications ● Power Management for Netcom, Computing and Portable Appl

12V 双 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

\n优势:\n• 符合 RoHS\n• 经过充分验证的雪崩电压和电流\n• 低栅漏电荷，可降低开关损耗\n• 经过充分验证的的电容，包括有效的Coss以简化设计\n• 双 N 通道 MOSFET;

Ultra-Low Gate Impedance

Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency 3.3V and 5V input Point-of-Load Synchronous Buck Converters for Netcom and Computing Applications ● Power Management for Netcom, Computing and Portable App

HEXFET Power MOSFET

Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency 3.3V and 5V input Point-of-Load Synchronous Buck Converters for Netcom and Computing Applications ● Power Management for Netcom, Computing and Portable App

Ultra-Low Gate Impedance

Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency 3.3V and 5V input Point-of-Load Synchronous Buck Converters for Netcom and Computing Applications ● Power Management for Netcom, Computing and Portable App

HEXFET Power MOSFET

文件：229.57 Kbytes Page：8 Pages

Ultra-Low Gate Impedance

文件：223.96 Kbytes Page：8 Pages

HEXFET Power MOSFET

文件：229.57 Kbytes Page：8 Pages

Ultra-Low Gate Impedance

文件：223.96 Kbytes Page：8 Pages

12V 双 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

Industry-standard pinout SO-8 Package

文件：201.2 Kbytes Page：8 Pages

Industry-standard pinout SO-8 Package

文件：201.2 Kbytes Page：8 Pages

1 550 nm OPTICAL FIBER COMMUNICATIONS EA MODULATOR INTEGRATED MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH APPLICATIONS

DESCRIPTION The NDL7910P is an EA modulator integrated 1 550 nm DFB-LD for 2.5 Gb/s. The newly developed bandgap energy controlled Selective MOVPE technology is utilized as fabrication method. It is designed for 2.5 Gb/s ultralong reach applications. FEATURES • Integrated electroabsorption modu

1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE

DESCRIPTION The NDL7603P Series is a 1310 nm phase-shifted DFB (distributed feedback) laser diode module with single mode fiber. The Multiple Quantum Well (st-MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation over a wide temperature range of -40 to +85°C. It

1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE

DESCRIPTION The NX8562LB is a 1 550 nm laser diode with Polarization Maintain Fiber (PMF). This device is designed as CW light source and ideal for transmission systems in which external modulators are used. FEATURES • Output power Pf = 20 mW MIN. • Wavelength selectable for ITU-T standards

1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX7460LE is a 1 480 nm pumping laser diode module with optical isolator for an EDFA (Er Doped optical Fiber Amplifier) that can expand the transmission span and compensate optical losses. It has a strained Multiple Quantum Well (st-MQW) DC-PBH laser diode that features high output

1 550 nm OPTICAL FIBER COMMUNICATIONS EA MODULATOR INTEGRATED MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH APPLICATIONS

DESCRIPTION The NDL7910P is an EA modulator integrated 1 550 nm DFB-LD for 2.5 Gb/s. The newly developed bandgap energy controlled Selective MOVPE technology is utilized as fabrication method. It is designed for 2.5 Gb/s ultralong reach applications. FEATURES • Integrated electroabsorption modu