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IRF7811价格

参考价格:¥1.3797

型号:IRF7811AVPBF 品牌:INTERNATIONAL 备注:这里有IRF7811多少钱,2026年最近7天走势,今日出价,今日竞价,IRF7811批发/采购报价,IRF7811行情走势销售排行榜,IRF7811报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF7811

Synchronous Buck Controller

GENERAL DESCRIPTION The ADP1878/ADP1879 are versatile current-mode, synchronous step-down controllers. They provide superior transient response, optimal stability, and current-limit protection by using a constant on time, pseudo fixed frequency with a programmable current-limit, current control s

AD

亚德诺

IRF7811

N-Channel Application-Specific MOSFETs

文件:132.03 Kbytes Page:4 Pages

IRF

IRF7811

MOSFET N-CH 28V 14A 8-SOIC

INFINEON

英飞凌

Chipset for DC-DC Converters

Description These new devices employ advanced HEXFET® Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC converters that power the latest generation of microprocessor

IRF

PROVISIONAL DATASHEET

Applications • High Frequency Synchronous Buck Converters for Computer Processor Power • High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use • 100 R G Tested Benefits • Very Low RDS(on) at 4.5V VGS • Ultra-Low Gate Impedance

IRF

HEXFET Power MOSFET

Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom

IRF

PROVISIONAL DATASHEET

Applications • High Frequency Synchronous Buck Converters for Computer Processor Power • High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use • 100 R G Tested Benefits • Very Low RDS(on) at 4.5V VGS • Ultra-Low Gate Impedance

IRF

30V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 快速开关\n• 纤薄外形(小于1.1毫米)\n• SOT-23 封装;

INFINEON

英飞凌

N-Channel Application-Specific MOSFETs

Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. Th

IRF

N-Channel Application-Specific MOSFETs

Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. Th

IRF

N-Channel Application-Specific MOSFETs

Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. Th

IRF

N-Channel Application-Specific MOSFETs

Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. Th

IRF

Power MOSFET for DC-DC Converters

Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. •

IRF

N-Channel Application-Specific MOSFETs

Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. •

IRF

HEXFET짰 Power MOSFET for DC-DC Converters

Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. •

IRF

MOSFET N-CH 28V 11A 8-SOIC

INFINEON

英飞凌

N-Channel Application-Specific MOSFETs

文件:116.7 Kbytes Page:6 Pages

IRF

N-Channel Application-Specific MOSFETs

文件:116.7 Kbytes Page:6 Pages

IRF

N-Channel Application-Specific MOSFETs

文件:116.7 Kbytes Page:6 Pages

IRF

Industry-standard pinout SO-8 Package

文件:188.45 Kbytes Page:6 Pages

IRF

Industry-standard pinout SO-8 Package

文件:188.45 Kbytes Page:6 Pages

IRF

N-Channel Application-Specific MOSFETs

文件:116.7 Kbytes Page:6 Pages

IRF

N-Channel 20V (D-S) MOSFET

文件:1.05277 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N-Channel Application-Specific MOSFETs

文件:191.31 Kbytes Page:6 Pages

IRF

N-Channel 20V (D-S) MOSFET

文件:1.05271 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N-Channel Application-Specific MOSFETs

文件:191.31 Kbytes Page:6 Pages

IRF

2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs

GENERAL DESCRIPTION The AD7811 and AD7812 are high speed, low power, 10-bit A/D converters that operate from a single 2.7 V to 5.5 V supply. The devices contain a 2.3 µs successive approximation A/D converter, an on-chip track/hold amplifier, a 2.5 V on-chip reference and a high speed serial inte

AD

亚德诺

2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs

GENERAL DESCRIPTION The AD7811 and AD7812 are high speed, low power, 10-bit A/D converters that operate from a single 2.7 V to 5.5 V supply. The devices contain a 2.3 µs successive approximation A/D converter, an on-chip track/hold amplifier, a 2.5 V on-chip reference and a high speed serial inte

AD

亚德诺

2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs

GENERAL DESCRIPTION The AD7811 and AD7812 are high speed, low power, 10-bit A/D converters that operate from a single 2.7 V to 5.5 V supply. The devices contain a 2.3 µs successive approximation A/D converter, an on-chip track/hold amplifier, a 2.5 V on-chip reference and a high speed serial inte

AD

亚德诺

2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs

GENERAL DESCRIPTION The AD7811 and AD7812 are high speed, low power, 10-bit A/D converters that operate from a single 2.7 V to 5.5 V supply. The devices contain a 2.3 µs successive approximation A/D converter, an on-chip track/hold amplifier, a 2.5 V on-chip reference and a high speed serial inte

AD

亚德诺

Single-chip DVD-ROM

文件:86.95 Kbytes Page:20 Pages

PHILIPS

飞利浦

IRF7811产品属性

  • 类型

    描述

  • Package :

    SO-8

  • VDS max:

    30.0V

  • RDS (on)(@4.5V) max:

    14.0mΩ

  • Polarity :

    N

  • ID (@ TA=70°C) max:

    13.0A

  • ID (@ TA=25°C) max:

    14.0A

  • Ptot(@ TA=25°C) max:

    3.5W

  • QG :

    17.0nC 

  • RthJA max:

    50.0K/W

  • Mounting :

    SMD

  • Tj max:

    150.0°C

  • Moisture Sensitivity Level :

    1

  • Qgd :

    5.1nC 

  • VGS max:

    20.0V

更新时间:2026-5-15 18:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
25+
SOP-8
35643
IR全新特价IRF7811AVUTRPBF即刻询购立享优惠#长期有货
IOR
2025+
SSOP
4119
全新原装、公司现货热卖
Infineon
23+
SOP
6850
只做原装正品假一赔十为客户做到零风险!!
1345
8
IR
11
92
IR
22+
原厂封装
15850
原装正品,实单请联系
25+
SOP
2860
原厂原装正品价格优惠公司现货欢迎查询
IR
24+
SOP8
98000
一级代理/全新原装现货/长期供应!
INFINEON
25+
SOP-8
8000
原装正品!!!优势库存!0755-83210901
IR
2016+
SOP8
8511
只做原装,假一罚十,公司可开17%增值税发票!
IR
2023+
SOP
53500
正品,原装现货

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