IRF7811A价格

参考价格:¥1.3797

型号:IRF7811AVPBF 品牌:INTERNATIONAL 备注:这里有IRF7811A多少钱,2025年最近7天走势,今日出价,今日竞价,IRF7811A批发/采购报价,IRF7811A行情走势销售排行榜,IRF7811A报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF7811A

Chipset for DC-DC Converters

Description These new devices employ advanced HEXFET® Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC converters that power the latest generation of microprocessor

IRF

IRF7811A

PROVISIONAL DATASHEET

Applications • High Frequency Synchronous Buck Converters for Computer Processor Power • High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use • 100 R G Tested Benefits • Very Low RDS(on) at 4.5V VGS • Ultra-Low Gate Impedance

IRF

HEXFET Power MOSFET

Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom

IRF

PROVISIONAL DATASHEET

Applications • High Frequency Synchronous Buck Converters for Computer Processor Power • High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use • 100 R G Tested Benefits • Very Low RDS(on) at 4.5V VGS • Ultra-Low Gate Impedance

IRF

N-Channel Application-Specific MOSFETs

Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. Th

IRF

N-Channel Application-Specific MOSFETs

Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. Th

IRF

N-Channel Application-Specific MOSFETs

Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. Th

IRF

N-Channel Application-Specific MOSFETs

Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. Th

IRF

MOSFET N-CH 28V 11A 8-SOIC

Infineon

英飞凌

30V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

Infineon

英飞凌

N-Channel Application-Specific MOSFETs

文件:116.7 Kbytes Page:6 Pages

IRF

N-Channel Application-Specific MOSFETs

文件:116.7 Kbytes Page:6 Pages

IRF

N-Channel Application-Specific MOSFETs

文件:116.7 Kbytes Page:6 Pages

IRF

Industry-standard pinout SO-8 Package

文件:188.45 Kbytes Page:6 Pages

IRF

30V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

Infineon

英飞凌

Industry-standard pinout SO-8 Package

文件:188.45 Kbytes Page:6 Pages

IRF

N-Channel Application-Specific MOSFETs

文件:116.7 Kbytes Page:6 Pages

IRF

N-Channel 20V (D-S) MOSFET

文件:1.05277 Mbytes Page:9 Pages

VBSEMI

微碧半导体

2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs

GENERAL DESCRIPTION The AD7811 and AD7812 are high speed, low power, 10-bit A/D converters that operate from a single 2.7 V to 5.5 V supply. The devices contain a 2.3 µs successive approximation A/D converter, an on-chip track/hold amplifier, a 2.5 V on-chip reference and a high speed serial inte

AD

亚德诺

2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs

GENERAL DESCRIPTION The AD7811 and AD7812 are high speed, low power, 10-bit A/D converters that operate from a single 2.7 V to 5.5 V supply. The devices contain a 2.3 µs successive approximation A/D converter, an on-chip track/hold amplifier, a 2.5 V on-chip reference and a high speed serial inte

AD

亚德诺

2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs

GENERAL DESCRIPTION The AD7811 and AD7812 are high speed, low power, 10-bit A/D converters that operate from a single 2.7 V to 5.5 V supply. The devices contain a 2.3 µs successive approximation A/D converter, an on-chip track/hold amplifier, a 2.5 V on-chip reference and a high speed serial inte

AD

亚德诺

2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs

GENERAL DESCRIPTION The AD7811 and AD7812 are high speed, low power, 10-bit A/D converters that operate from a single 2.7 V to 5.5 V supply. The devices contain a 2.3 µs successive approximation A/D converter, an on-chip track/hold amplifier, a 2.5 V on-chip reference and a high speed serial inte

AD

亚德诺

2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs

文件:211.68 Kbytes Page:19 Pages

AD

亚德诺

IRF7811A产品属性

  • 类型

    描述

  • 型号

    IRF7811A

  • 功能描述

    MOSFET N-CH 28V 11.4A 8-SOIC

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-9-28 8:21:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IOR
25+
SOP8
96781
百分百原装正品 真实公司现货库存 本公司只做原装 可
IR
20+21+
SOP8
58550
金睿扬电子,只做全新原装正品可订货欢迎咨询QQ微信
IR
18+
SOIC8
33513
全新原装现货,可出样品,可开增值税发票
IR
2016+
SOP8
8511
只做原装,假一罚十,公司可开17%增值税发票!
IR/INFINEON
24+
SOP-8
501537
免费送样原盒原包现货一手渠道联系
IR(国际整流器)
24+
N/A
7385
原厂可订货,技术支持,直接渠道。可签保供合同
IR
24+
SOP-8
5419
只做原厂渠道 可追溯货源
IOR
24+
SMD
1314
IR
SOP8
630
正品原装--自家现货-实单可谈
IOR
25+
PLCC
18000
原厂直接发货进口原装

IRF7811A数据表相关新闻