IRF7811A价格
参考价格:¥1.3797
型号:IRF7811AVPBF 品牌:INTERNATIONAL 备注:这里有IRF7811A多少钱,2026年最近7天走势,今日出价,今日竞价,IRF7811A批发/采购报价,IRF7811A行情走势销售排行榜,IRF7811A报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF7811A | Chipset for DC-DC Converters Description These new devices employ advanced HEXFET® Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC converters that power the latest generation of microprocessor | IRF | ||
IRF7811A | PROVISIONAL DATASHEET Applications • High Frequency Synchronous Buck Converters for Computer Processor Power • High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use • 100 R G Tested Benefits • Very Low RDS(on) at 4.5V VGS • Ultra-Low Gate Impedance | IRF | ||
HEXFET Power MOSFET Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom | IRF | |||
PROVISIONAL DATASHEET Applications • High Frequency Synchronous Buck Converters for Computer Processor Power • High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use • 100 R G Tested Benefits • Very Low RDS(on) at 4.5V VGS • Ultra-Low Gate Impedance | IRF | |||
N-Channel Application-Specific MOSFETs Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. Th | IRF | |||
N-Channel Application-Specific MOSFETs Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. Th | IRF | |||
30V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装 \n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 快速开关\n• 纤薄外形(小于1.1毫米)\n• SOT-23 封装; | INFINEON 英飞凌 | |||
N-Channel Application-Specific MOSFETs Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. Th | IRF | |||
N-Channel Application-Specific MOSFETs Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. Th | IRF | |||
MOSFET N-CH 28V 11A 8-SOIC | INFINEON 英飞凌 | |||
N-Channel Application-Specific MOSFETs 文件:116.7 Kbytes Page:6 Pages | IRF | |||
N-Channel Application-Specific MOSFETs 文件:116.7 Kbytes Page:6 Pages | IRF | |||
N-Channel Application-Specific MOSFETs 文件:116.7 Kbytes Page:6 Pages | IRF | |||
30V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装 | INFINEON 英飞凌 | |||
Industry-standard pinout SO-8 Package 文件:188.45 Kbytes Page:6 Pages | IRF | |||
Industry-standard pinout SO-8 Package 文件:188.45 Kbytes Page:6 Pages | IRF | |||
N-Channel 20V (D-S) MOSFET 文件:1.05277 Mbytes Page:9 Pages | VBSEMI 微碧半导体 | |||
N-Channel Application-Specific MOSFETs 文件:116.7 Kbytes Page:6 Pages | IRF | |||
2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs GENERAL DESCRIPTION The AD7811 and AD7812 are high speed, low power, 10-bit A/D converters that operate from a single 2.7 V to 5.5 V supply. The devices contain a 2.3 µs successive approximation A/D converter, an on-chip track/hold amplifier, a 2.5 V on-chip reference and a high speed serial inte | AD 亚德诺 | |||
2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs GENERAL DESCRIPTION The AD7811 and AD7812 are high speed, low power, 10-bit A/D converters that operate from a single 2.7 V to 5.5 V supply. The devices contain a 2.3 µs successive approximation A/D converter, an on-chip track/hold amplifier, a 2.5 V on-chip reference and a high speed serial inte | AD 亚德诺 | |||
2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs GENERAL DESCRIPTION The AD7811 and AD7812 are high speed, low power, 10-bit A/D converters that operate from a single 2.7 V to 5.5 V supply. The devices contain a 2.3 µs successive approximation A/D converter, an on-chip track/hold amplifier, a 2.5 V on-chip reference and a high speed serial inte | AD 亚德诺 | |||
2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs GENERAL DESCRIPTION The AD7811 and AD7812 are high speed, low power, 10-bit A/D converters that operate from a single 2.7 V to 5.5 V supply. The devices contain a 2.3 µs successive approximation A/D converter, an on-chip track/hold amplifier, a 2.5 V on-chip reference and a high speed serial inte | AD 亚德诺 | |||
Single-chip DVD-ROM 文件:86.95 Kbytes Page:20 Pages | PHILIPS 飞利浦 |
IRF7811A产品属性
- 类型
描述
- Package :
SO-8
- VDS max:
30.0V
- RDS (on)(@4.5V) max:
14.0mΩ
- Polarity :
N
- ID (@ TA=70°C) max:
13.0A
- ID (@ TA=25°C) max:
14.0A
- Ptot(@ TA=25°C) max:
3.5W
- QG :
17.0nC
- RthJA max:
50.0K/W
- Mounting :
SMD
- Tj max:
150.0°C
- Moisture Sensitivity Level :
1
- Qgd :
5.1nC
- VGS max:
20.0V
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon |
23+ |
SOP |
6850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
IR |
24+ |
SOT-223 |
59 |
||||
IR |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
IR |
23+ |
65480 |
|||||
INTREC |
23+ |
NA |
2486 |
专做原装正品,假一罚百! |
|||
INR |
23+ |
TO-3 |
5000 |
原装正品,假一罚十 |
|||
IOR |
2025+ |
SSOP |
4119 |
全新原装、公司现货热卖 |
|||
INFINEON/英飞凌 |
2025+ |
SO8 |
5000 |
原装进口价格优 请找坤融电子! |
|||
IR(国际整流器) |
26+ |
10548 |
原厂订货渠道,支持账期,一站式服务! |
||||
IR |
2023+ |
SOP |
53500 |
正品,原装现货 |
IRF7811A规格书下载地址
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DdatasheetPDF页码索引
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