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IRF7811WPBF

HEXFET짰 Power MOSFET for DC-DC Converters

Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. •

IRF

IRF7811WPBF

N-Channel Application-Specific MOSFETs

文件:191.31 Kbytes Page:6 Pages

IRF

2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs

GENERAL DESCRIPTION The AD7811 and AD7812 are high speed, low power, 10-bit A/D converters that operate from a single 2.7 V to 5.5 V supply. The devices contain a 2.3 µs successive approximation A/D converter, an on-chip track/hold amplifier, a 2.5 V on-chip reference and a high speed serial inte

AD

亚德诺

2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs

GENERAL DESCRIPTION The AD7811 and AD7812 are high speed, low power, 10-bit A/D converters that operate from a single 2.7 V to 5.5 V supply. The devices contain a 2.3 µs successive approximation A/D converter, an on-chip track/hold amplifier, a 2.5 V on-chip reference and a high speed serial inte

AD

亚德诺

2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs

GENERAL DESCRIPTION The AD7811 and AD7812 are high speed, low power, 10-bit A/D converters that operate from a single 2.7 V to 5.5 V supply. The devices contain a 2.3 µs successive approximation A/D converter, an on-chip track/hold amplifier, a 2.5 V on-chip reference and a high speed serial inte

AD

亚德诺

2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs

GENERAL DESCRIPTION The AD7811 and AD7812 are high speed, low power, 10-bit A/D converters that operate from a single 2.7 V to 5.5 V supply. The devices contain a 2.3 µs successive approximation A/D converter, an on-chip track/hold amplifier, a 2.5 V on-chip reference and a high speed serial inte

AD

亚德诺

Single-chip DVD-ROM

文件:86.95 Kbytes Page:20 Pages

PHILIPS

飞利浦

IRF7811WPBF产品属性

  • 类型

    描述

  • 型号

    IRF7811WPBF

  • 功能描述

    MOSFET 30V 1 N-CH HEXFET 12mOhms 15.6nC

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-8-3 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FSC
23+
NA
6500
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80000
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2000
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NA
2486
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22+
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8000
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IR
25+
SOP8
30000
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IR
24+
SOT-223
59
INR
23+
TO-3
44353
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Vishay Dale
25+
轴向
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
IR
23+
65480

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