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IRF7807Z价格
参考价格：￥1.4110
型号：IRF7807ZPBF 品牌：INTERNATIONAL 备注：这里有IRF7807Z多少钱，2025年最近7天走势，今日出价，今日竞价，IRF7807Z批发/采购报价，IRF7807Z行情走势销售排行榜，IRF7807Z报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF7807Z | HEXFET Power MOSFET Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current ● 100 Tested for RG Applications ● Control FET for Notebook Processor Power ● Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking a | IRF |   | |
IRF7807Z | Control FET for Notebook Processor Power Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current ● 100 Tested for RG Applications ● Control FET for Notebook Processor Power ● Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking a | IRF | | |
IRF7807Z | 30V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装 | Infineon 英飞凌 | | |
Control FET for Notebook Processor Power Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current ● 100 Tested for RG Applications ● Control FET for Notebook Processor Power ● Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking a | IRF | | ||
N-Channel Enhancement Mode Power MOSFET Features VDS= 20V, ID= 10 A RDS(ON) | Bychip 百域芯 | | ||
HEXFET Power MOSFET 文件：214.5 Kbytes Page：10 Pages | IRF | | ||
Control FET for Notebook Processor Power 文件：220.06 Kbytes Page：10 Pages | IRF | | ||
Control FET for Notebook Processor Power 文件：220.06 Kbytes Page：10 Pages | IRF | | ||
Control FET for Notebook Processor Power 文件：220.06 Kbytes Page：10 Pages | IRF | | ||
Control FET for Notebook Processor Power 文件：220.06 Kbytes Page：10 Pages | IRF | | ||
HEXFET Power MOSFET 文件：256.87 Kbytes Page：10 Pages | IRF | | ||
HEXFET Power MOSFET | Infineon 英飞凌 | | ||
50 Ohm Wireless Transmission Coax, RF 200, RG58, 17 AWG Solid BC, Foil 95% TC Braid, PE Jkt Product Description 50 Ohm Wireless Transmission Coax, RF 200, RG58, 17 AWG Solid Bare Copper Conductor, PE Insulation, Duofoil® + 95% Tinned Copper Braid Shield, PE Jacket | BELDEN 百通 | | ||
RF 200 Wireless Coax, RG58, #17, CMR/CMG Product Description RF 200, RG-58 type, 17 AWG solid .044 bare copper conductor, gas-injected foam HDPE insulation, Duofoil® (100% coverage); tinned copper braid shield (95% coverage), PVC jacket. | BELDEN 百通 | | ||
RovNav Mk4 LBL Transceiver (Discontinued) 文件：99.02 Kbytes Page：2 Pages | SONARDYNE | | ||
RG-58 type, 17 AWG solid .044 bare copper conductor, gas-injected foam HDPE insulation 文件：102.29 Kbytes Page：3 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | ||
Low-Power, 16-Bit, Sampling CMOS ANALOG-to-DIGITAL CONVERTER 文件：526.93 Kbytes Page：24 Pages | BURR-BROWN | |
IRF7807Z产品属性
- 类型
描述
- 型号
IRF7807Z
- 功能描述
MOSFET N-CH 30V 11A 8-SOIC
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
24+ |
N/A |
46000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
Infineon/英飞凌 |
24+ |
SOIC-8_150mil |
25000 |
原装正品,假一赔十! |
|||
INFINEON/英飞凌 |
20+ |
SO8 |
120000 |
原装正品 可含税交易 |
|||
IR |
1925+ |
SOP-8 |
12500 |
原装现货价格优势可供更多可出样 |
|||
NK/南科功率 |
2025+ |
SOP-8 |
986966 |
国产 |
|||
IR |
23+ |
SOP-8 |
50000 |
全新原装正品现货,支持订货 |
|||
Infineon/英飞凌 |
24+ |
SOIC-8_150mil |
8000 |
只做原装，欢迎询价，量大价优 |
|||
IR |
24+ |
NA |
16000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
IR |
23+ |
SOP-8 |
4500 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
IRF7807Z规格书下载地址
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