Control FET for Notebook Processor Power

Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current ● 100 Tested for RG Applications ● Control FET for Notebook Processor Power ● Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking a

N-Channel Enhancement Mode Power MOSFET

Features  VDS= 20V, ID= 10 A RDS(ON)

Control FET for Notebook Processor Power

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Chip-Set for DC-DC Converters

Description These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microproce

N Channel Application Specific MOSFET

Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduction of conduction and switching losses makes it ideal for high efficiency DC-DC Converters that power the latest generation of mobile micropr

Low-Power 16-Bit Sampling CMOS ANALOG-to-DIGITAL CONVERTER

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Low-Power 16-Bit Sampling CMOS ANALOG-to-DIGITAL CONVERTER

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THREE TERMINAL POSITIVE VOLTAGE REGULATORS

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