位置：首页 > IC中文资料第1074页 > IRF7523D1
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF7523D1 | FETKY??MOSFET / Schottky Diode(Vdss=30V, Rds(on)=0.11ohm, Schottky Vf=0.39V) Description The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combini | IRF |   | |
IRF7523D1 | FETKY™ MOSFET / Schottky Diode(Vdss=30V, Rds(on)=0.11ohm, Schottky Vf=0.39V) | Infineon 英飞凌 | | |
Co-packaged HEXFET짰 Power MOSFET and Schottky Diode 文件：185.12 Kbytes Page：10 Pages | IRF | |
IRF7523D1产品属性
- 类型
描述
- 型号
IRF7523D1
- 功能描述
MOSFET N-CH 30V 2.7A MICRO-8
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
FETKY™
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
IR |
24+ |
MSOP8 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
23+ |
Micro8 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IR |
1923+ |
MSOP-8 |
5000 |
正品原装品质假一赔十 |
|||
IR |
23+ |
MSOP8 |
50000 |
全新原装正品现货,支持订货 |
|||
Infineon Technologies |
22+ |
8TSSOP 8MSOP |
9000 |
原厂渠道,现货配单 |
|||
IR |
20+ |
SOP8 |
2960 |
诚信交易大量库存现货 |
|||
IR |
22+ |
MSOP8 |
8000 |
原装正品支持实单 |
|||
IR |
08+ |
MSOP8 |
3300 |
全新原装现货绝对自己公司特价库 |
|||
IR |
23+ |
MSOP8 |
4250 |
现货库存 |
IRF7523D1规格书下载地址
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DdatasheetPDF页码索引
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