HEXFETPowerMOSFET

Benefits ●LowGatetoDrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters

BipolarTransistor-50V,-0.4A,LowVCE(sat)PNPSingleSSFP

BipolarTransistor –50V,–0.4A,LowVCE(sat)PNPSingleSSFP Features •Largecurrentcapacity •Lowcollector-to-emittersaturationvoltage(resistance):RCE(sat)typ=210mΩ[IC=0.5A,IB=50mA] •Ultrasmallpackagefacilitatesminiaturizationinendproducts •SmallON-resistance(Ron) Appli

HEXFETPowerMOSFET

Benefits ●LowGatetoDrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free

10GUSB3.2Re-timer(1-Port)

Features *Built-inre-timer ㅡIntegratedre-timerforUSB3.21-port(Tx/Rx)upto10Gbps ㅡSupportsbothSeparateReferenceClockIndependentSSC(SRIS)andBit-LevelRe- *timer(BLR)ArchitecturesofUSB3.1Specification(Appendix-E) ㅡ1055compensationtorecoverupto23dBchannelloss

BidirectionalActiveUSB-C™CableforUSB3.2(10G)andDP1.3(8.1G)

Features BidirectionalactiveUSB-Ccablecarrying4LDPor2LDPandUSB3.2 -Supportsupto4LofDisplayPortin/out,withsignalconditioningupto8.1Gbps(supportsHBR3,HBR2,HBR,RBRrates) -SupportsUSB3.1in/out,withsignalconditioningupto10Gbps -SupportsUSB2.0(480Mbps) -