HEXFET Power MOSFET

Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The

HEXFET Power MOSFET

HEXFET짰 Power MOSFET

文件：165.05 Kbytes Page：9 Pages

10G USB 3.2 Re-timer (1-Port)

Features * Built-in re-timer ㅡ Integrated re-timer for USB 3.2 1-port (Tx/Rx) up to 10Gbps ㅡ Supports both Separate Reference Clock Independent SSC (SRIS) and Bit-Level Re- * timer (BLR) Architectures of USB3.1 Specification (Appendix-E) ㅡ 1055 compensation to recover up to 23dB channel loss

10G Active Redriver with Linear Equalization for USB3.2/DisplayPort™

Features • Built-in redrivers − Integrated re-driver for USB3.2 up to Gen 2 @ 10Gbps − Integrated re-drivers for DisplayPort up to UHBR10 @ 10Gbps. − Supports both host (source) and device (sink) applications in USB-C subsystems with DisplayPort Alternate Mode − Loss compensation to recover u

Quad 2-Input OR Gate

文件：59.89 Kbytes Page：5 Pages

P-Channel 30-V MOSFET

文件：393.45 Kbytes Page：7 Pages

P-Channel 30-V (D-S) MOSFET

文件：79.27 Kbytes Page：3 Pages