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IRF7413价格

参考价格:¥5.6322

型号:IRF7413 品牌:International Rectifier 备注:这里有IRF7413多少钱,2026年最近7天走势,今日出价,今日竞价,IRF7413批发/采购报价,IRF7413行情走势销售排行榜,IRF7413报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF7413

丝印代码:IRF7413;Generation VTechnology

Generation VTechnology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape &Reel Dynamic dv/dt Rating Fast Switching 100 Rg Tested Lead-Free Application Features VDS (V) = 30V RDS(ON) 12m (VGS = 10V) RDS(ON) 17m (VGS = 4.5V)

UMW

友台半导体

丝印代码:IRF7413;MOSFET

Application Generation VTechnology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape &Reel Dynamic dv/dt Rating Fast Switching 100 Rg Tested Lead-Free Features VDS (V) = 30V RDS(ON)

EVVOSEMI

翊欧

丝印代码:IRF7413;Generation VTechnology

Generation VTechnology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape &Reel Dynamic dv/dt Rating Fast Switching 100 Rg Tested Lead-Free Application Features VDS (V) = 30V RDS(ON) 12m (VGS = 10V) RDS(ON) 17m (VGS = 4.5V)

UMW

友台半导体

丝印代码:IRF7413;30V N-Channel MOSFET

Application Generation VTechnology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape &Reel Dynamic dv/dt Rating Fast Switching 100 Rg Tested Lead-Free Features VDS (V) = 30V RDS(ON)

EVVOSEMI

翊欧

IRF7413

MOSFET

Application Generation VTechnology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape &Reel Dynamic dv/dt Rating Fast Switching 100 Rg Tested Lead-Free Features VDS (V) = 30V RDS(ON)

EVVOSEMI

翊欧

IRF7413

采用 SO-8 封装的 30V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 低开关耗能\n• 低通态损耗;

INFINEON

英飞凌

IRF7413

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 12 A (VGS = 10V) ● RDS(ON)

KEXIN

科信电子

IRF7413

Power MOSFET(Vdss=30V, Id=12A)

SMPS MOSFET Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

IRF

Power MOSFET(Vdss=30V, Rds(on)=0.0135ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

HEXFET Power MOSFET

Description These HEXFET®Power MOSFETs in SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive aval

IRF

Ultra Low On-Resistance

SMPS MOSFET Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

IRF

N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES © Vo =30Vlo 124 Rosin

TECHPUBLIC

台舟电子

HEXFET Power MOSFET

Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) ● Fully Characterized Avalanche Voltage and Current ● 100 Tested for RG Applications ● Control FET for Notebook Processor Power ● Control and Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Computing, Netwo

IRF

Control FET for Notebool Processor Power, Control and Synchronous Rectifier

Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) ● Fully Characterized Avalanche Voltage and Current ● 100 Tested for RG ● Lead-Free Applications ● Control FET for Notebook Processor Power ● Control and Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Computi

IRF

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

HEXFET POWER MOSFET

文件:239.41 Kbytes Page:9 Pages

IRF

Ultra Low On-Resistance

文件:264.75 Kbytes Page:9 Pages

IRF

Generation V Technology

INFINEON

英飞凌

Generation V Technology

文件:264.75 Kbytes Page:9 Pages

IRF

ULTAR LOW ON RESISTANCE

文件:263.63 Kbytes Page:9 Pages

IRF

ULTAR LOW ON RESISTANCE

文件:263.63 Kbytes Page:9 Pages

IRF

Industry-standard pinout SO-8 Package

文件:233.23 Kbytes Page:9 Pages

IRF

30V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

INFINEON

英飞凌

Industry-standard pinout SO-8 Package

文件:233.23 Kbytes Page:9 Pages

IRF

HEXFETPOWERMOSFET

文件:243.23 Kbytes Page:9 Pages

IRF

fast suitching

文件:263.63 Kbytes Page:9 Pages

IRF

N-Channel 20V (D-S) MOSFET

文件:1.89771 Mbytes Page:9 Pages

VBSEMI

微碧半导体

Control FET for Notebook Processor Power

文件:272.06 Kbytes Page:10 Pages

IRF

Control FET for Notebook Processor Power

文件:272.06 Kbytes Page:10 Pages

IRF

Control FET for Notebook Processor Power

文件:292.06 Kbytes Page:10 Pages

IRF

Control FET for Notebook Processor Power

文件:289.79 Kbytes Page:10 Pages

IRF

Control FET for Notebook Processor Power

文件:289.79 Kbytes Page:10 Pages

IRF

Control FET for Notebook Processor Power

文件:272.06 Kbytes Page:10 Pages

IRF

Control FET for Notebook Processor Power

文件:272.06 Kbytes Page:10 Pages

IRF

Power MOSFET(Vdss=30V, Id=12A)

SMPS MOSFET Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

IRF

5th-Order, Lowpass, Switched-Capacitor Filters

General Description The MAX7409/MAX7410/MAX7413/MAX7414 5th-order, lowpass, switched-capacitor filters (SCFs) operate from a single +5V (MAX7409/MAX7410) or +3V (MAX7413/MAX7414) supply. These devices draw only 1.2mA of supply current and allow corner frequencies from 1Hz to 15kHz, making them

MAXIM

美信

5th-Order, Lowpass, Switched-Capacitor Filters

General Description The MAX7409/MAX7410/MAX7413/MAX7414 5th-order, lowpass, switched-capacitor filters (SCFs) operate from a single +5V (MAX7409/MAX7410) or +3V (MAX7413/MAX7414) supply. These devices draw only 1.2mA of supply current and allow corner frequencies from 1Hz to 15kHz, making them

MAXIM

美信

5th-Order, Lowpass, Switched-Capacitor Filters

General Description The MAX7409/MAX7410/MAX7413/MAX7414 5th-order, lowpass, switched-capacitor filters (SCFs) operate from a single +5V (MAX7409/MAX7410) or +3V (MAX7413/MAX7414) supply. These devices draw only 1.2mA of supply current and allow corner frequencies from 1Hz to 15kHz, making them

MAXIM

美信

IRF7413产品属性

  • 类型

    描述

  • Package :

    SO-8

  • VDS max:

    30.0V

  • RDS (on) max:

    11.0mΩ

  • RDS (on)(@10V) max:

    11.0mΩ

  • RDS (on)(@4.5V) max:

    18.0mΩ

  • Polarity :

    N

  • ID (@ TA=70°C) max:

    9.2A

  • ID (@ TA=25°C) max:

    13.0A

  • Ptot(@ TA=25°C) max:

    2.5W

  • QG :

    44.0nC 

  • RthJA max:

    50.0K/W

  • Mounting :

    SMD

  • Moisture Sensitivity Level :

    1

  • Qgd :

    9.2nC 

  • Tj max:

    150.0°C

  • VGS max:

    20.0V

更新时间:2026-5-14 9:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
25+
SOP3.9mm
9500
百分百原装正品 真实公司现货库存 本公司只做原装 可
UMW 友台
23+
SOP-8
33000
原装正品,实单请联系
IR
25+
SOP-8
35632
IR全新特价IRF7413ZTRPBF即刻询购立享优惠#长期有货
INFINEON/IR
19+
4000
SO-8
INFINEON/IR
SOP-8
50000
IR
25+
SOP-8
20000
原装
IR
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
IOR
25+
SOP8
2860
原厂原装正品价格优惠公司现货欢迎查询
IOR
24+
SOP-8
5830
全新原装现货,欢迎询购!!
IR
24+
SOP8
9800
一级代理/全新原装现货/长期供应!

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