Power MOSFET(Vdss=30V, Id=12A)

SMPS MOSFET Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 12 A (VGS = 10V) ● RDS(ON)

Generation VTechnology

Generation VTechnology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape &Reel Dynamic dv/dt Rating Fast Switching 100 Rg Tested Lead-Free Application Features VDS (V) = 30V RDS(ON) 12m (VGS = 10V) RDS(ON) 17m (VGS = 4.5V)

MOSFET

Application Generation VTechnology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape &Reel Dynamic dv/dt Rating Fast Switching 100 Rg Tested Lead-Free Features VDS (V) = 30V RDS(ON)

Power MOSFET(Vdss=30V, Rds(on)=0.0135ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET Power MOSFET

Description These HEXFET®Power MOSFETs in SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive aval

MOSFET

Application Generation VTechnology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape &Reel Dynamic dv/dt Rating Fast Switching 100 Rg Tested Lead-Free Features VDS (V) = 30V RDS(ON)

Generation VTechnology

Generation VTechnology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape &Reel Dynamic dv/dt Rating Fast Switching 100 Rg Tested Lead-Free Application Features VDS (V) = 30V RDS(ON) 12m (VGS = 10V) RDS(ON) 17m (VGS = 4.5V)

Ultra Low On-Resistance

SMPS MOSFET Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES © Vo =30Vlo 124 Rosin

30V N-Channel MOSFET

Application Generation VTechnology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape &Reel Dynamic dv/dt Rating Fast Switching 100 Rg Tested Lead-Free Features VDS (V) = 30V RDS(ON)

HEXFET Power MOSFET

Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) ● Fully Characterized Avalanche Voltage and Current ● 100 Tested for RG Applications ● Control FET for Notebook Processor Power ● Control and Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Computing, Netwo

Control FET for Notebool Processor Power, Control and Synchronous Rectifier

Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) ● Fully Characterized Avalanche Voltage and Current ● 100 Tested for RG ● Lead-Free Applications ● Control FET for Notebook Processor Power ● Control and Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Computi

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET POWER MOSFET

文件：239.41 Kbytes Page：9 Pages

Ultra Low On-Resistance

文件：264.75 Kbytes Page：9 Pages

Generation V Technology

文件：264.75 Kbytes Page：9 Pages

ULTAR LOW ON RESISTANCE

文件：263.63 Kbytes Page：9 Pages

ULTAR LOW ON RESISTANCE

文件：263.63 Kbytes Page：9 Pages

Industry-standard pinout SO-8 Package

文件：233.23 Kbytes Page：9 Pages

Industry-standard pinout SO-8 Package

文件：233.23 Kbytes Page：9 Pages

HEXFETPOWERMOSFET

文件：243.23 Kbytes Page：9 Pages

fast suitching

文件：263.63 Kbytes Page：9 Pages

N-Channel 20V (D-S) MOSFET

文件：1.89771 Mbytes Page：9 Pages

Control FET for Notebook Processor Power

文件：272.06 Kbytes Page：10 Pages

Control FET for Notebook Processor Power

文件：272.06 Kbytes Page：10 Pages

Control FET for Notebook Processor Power

文件：292.06 Kbytes Page：10 Pages

Control FET for Notebook Processor Power

文件：289.79 Kbytes Page：10 Pages

Control FET for Notebook Processor Power

文件：289.79 Kbytes Page：10 Pages

Control FET for Notebook Processor Power

文件：272.06 Kbytes Page：10 Pages

Control FET for Notebook Processor Power

文件：272.06 Kbytes Page：10 Pages

Power MOSFET(Vdss=30V, Id=12A)

SMPS MOSFET Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

MachFlex™, 61G C #18 Str BC, PVC-NYL Ins, OA TC Brd, TPE Jkt, 1000V WTTC, 600V TC-ER

Product Description MachFlex™ for High Flex, 6+1G Conductor 18AWG (16x30) Bare Copper, PVC-NYL Insulation, Overall Tinned Copper Braid(85) Shield, TPE Outer Jacket, 1000V WTTC, 600V TC-ER

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO7413 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low

7000 Series Miniature Toggle Switches

文件：1.03503 Mbytes Page：14 Pages

P-Channel 100-V (D-S) MOSFET

文件：409.49 Kbytes Page：5 Pages