Power MOSFET(Vdss=30V, Rds(on)=0.0135ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET® Power MOSFET

Power MOSFET(Vdss=30V, Id=12A)

SMPS MOSFET Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

MachFlex™, 61G C #18 Str BC, PVC-NYL Ins, OA TC Brd, TPE Jkt, 1000V WTTC, 600V TC-ER

Product Description MachFlex™ for High Flex, 6+1G Conductor 18AWG (16x30) Bare Copper, PVC-NYL Insulation, Overall Tinned Copper Braid(85) Shield, TPE Outer Jacket, 1000V WTTC, 600V TC-ER

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO7413 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low

7000 Series Miniature Toggle Switches

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P-Channel 100-V (D-S) MOSFET

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