Ultra Low On-Resistance

SMPS MOSFET Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

Generation VTechnology

Generation VTechnology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape &Reel Dynamic dv/dt Rating Fast Switching 100 Rg Tested Lead-Free Application Features VDS (V) = 30V RDS(ON) 12m (VGS = 10V) RDS(ON) 17m (VGS = 4.5V)

MOSFET

Application Generation VTechnology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape &Reel Dynamic dv/dt Rating Fast Switching 100 Rg Tested Lead-Free Features VDS (V) = 30V RDS(ON)

N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES © Vo =30Vlo 124 Rosin

fast suitching

文件：263.63 Kbytes Page：9 Pages

N-Channel 20V (D-S) MOSFET

文件：1.89771 Mbytes Page：9 Pages

Power MOSFET(Vdss=30V, Id=12A)

SMPS MOSFET Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

MachFlex™, 61G C #18 Str BC, PVC-NYL Ins, OA TC Brd, TPE Jkt, 1000V WTTC, 600V TC-ER

Product Description MachFlex™ for High Flex, 6+1G Conductor 18AWG (16x30) Bare Copper, PVC-NYL Insulation, Overall Tinned Copper Braid(85) Shield, TPE Outer Jacket, 1000V WTTC, 600V TC-ER

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO7413 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low

7000 Series Miniature Toggle Switches

文件：1.03503 Mbytes Page：14 Pages

P-Channel 100-V (D-S) MOSFET

文件：409.49 Kbytes Page：5 Pages