Power MOSFET(Vdss=-100V)

Description These dual N and P channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs ar

HEXFET짰 Power MOSFET

Description These dual N and P channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs ar

Ultra Low On-Resistance

Description These dual N and P channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs ar

Ultra Low On-Resistance

Description These dual N and P channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs ar

Ultra-Low Gate Impedance

Applications
Synchronous Rectifier MOSFET for Isolated DC-DC Converters
Low Power Motor Drive Systems

Features VDS (V) = 60V ID= 8A (VGS=10V)
RDS(ON) 23 m (VGS = 10V)

MOSFET

Features VDS (V) = 60V ID= 8A (VGS=10V) RDS(ON)

Ultra-Low Gate Impedance

Applications
Synchronous Rectifier MOSFET for Isolated DC-DC Converters
Low Power Motor Drive Systems

Features VDS (V) = 60V ID= 8A (VGS=10V)
RDS(ON) 23 m (VGS = 10V)

MOSFET

Features VDS (V) = 60V ID= 8A (VGS=10V) RDS(ON)

MOSFET / Schottky Diode (VDSS = 30V , RDS(on) = 0.029廓 , Schottky VF = 0.52V)

Description The FETKY™ family of Co-Pack HEXFET® Power MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Generation 5 HEXFET power MOSFETs utilize advanced processing techniques to achieve extremel

60V 双 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

Synchronous Rectifier MOSFET for Isolated DC-DC Converters

文件：288.66 Kbytes Page：10 Pages

Low Power Motor Drive Systems

文件：288.66 Kbytes Page：10 Pages

Synchronous Rectifier MOSFET for Isolated DC-DC Converters

文件：288.66 Kbytes Page：10 Pages

Low Power Motor Drive Systems

文件：288.66 Kbytes Page：10 Pages

Synchronous Rectifier MOSFET for Isolated DC-DC Converters

文件：288.66 Kbytes Page：10 Pages

FETKY MOSFET / Schottky Diode

文件：170.62 Kbytes Page：8 Pages

FETKY MOSFET / Schottky Diode

FETKY??MOSFET / Schottky Diode

文件：134.53 Kbytes Page：8 Pages

FETKY MOSFET / Schottky Diode

文件：128.69 Kbytes Page：8 Pages

FETKY MOSFET / Schottky Diode

Glass to tantalum hermetic seal

FEATURES • Terminations: standard tin/lead (SnPb), 100 tin (RoHS compliant) available • For - 55 °C to + 200 °C operation • All tantalum case • Glass to tantalum hermetic seal • Low ESR • High CV per unit volume • Extremely low leakage current • High permissible ripple cur

RS-232 Interface

文件：707.7 Kbytes Page：1 Pages

GROMMETS , BUSHINGS

文件：362.45 Kbytes Page：1 Pages

PLATE TRANSFORMER

文件：236.87 Kbytes Page：1 Pages

Wet Tantalum Capacitors with Glass to Tantalum Hermetic Seal CECC 30202 Approved

文件：112.03 Kbytes Page：10 Pages