Power MOSFET(Vdss=-100V)

Description These dual N and P channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs ar

HEXFET짰 Power MOSFET

Description These dual N and P channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs ar

Ultra Low On-Resistance

Description These dual N and P channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs ar

Ultra Low On-Resistance

Description These dual N and P channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs ar

150mA ULTRA-LOW QUIESCENT CURRENT LDO with ENABLE

Features Low VIN and Wide VIN Range: 2.0V to 5.25V Guarantee Output Current, 150mA Output Voltage Range: 1.2V to 4.5V VOUT Accuracy: ±1 Quiescent Current as Low as 0.25μA Typical Standby Current 0.02μA ESD Protection Exceeds JESD 22  Exceeds 4000V Human Body Model (A114)  Exceeds 400V M

Wire-Thread-Inserts

文件：102.37 Kbytes Page：3 Pages

Low Power Consumption LDO

文件：125.73 Kbytes Page：12 Pages

Common Mode Inductors/EMI Filters

文件：88.15 Kbytes Page：1 Pages

a step-down converter with integrated switching MOSFET

文件：338.49 Kbytes Page：9 Pages