HEXFET짰 Power MOSFET

Description New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer wi

Trench Technology

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Ultra Low On-Resistance

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Trench Technology Ultra Low On-Resistance

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Ultra Low On-Resistance

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8-Channel, Software-Selectable True Bipolar Input, 12-Bit Plus Sign ADC

GENERAL DESCRIPTION The AD7328 1 is an 8-channel, 12-bit plus sign, successive approximation ADC designed on the iCMOS (industrial CMOS) process. iCMOS is a process combining high voltage silicon with submicron CMOS and complementary bipolar technologies. It enables the development of a wide rang

TERMINAL LUGS

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LAN Isolation Transformers for 10 Base-T

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Isolation Transformers for 10 Base-T

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8-Channel, Software-Selectable, True Bipolar Input, 12-Bit Plus Sign ADC

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