HEXFET짰 Power MOSFET

Description New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer wi

Trench Technology

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Ultra Low On-Resistance

文件：175.47 Kbytes Page：8 Pages

Trench Technology Ultra Low On-Resistance

文件：175.47 Kbytes Page：8 Pages

Ultra Low On-Resistance

文件：175.47 Kbytes Page：8 Pages

High Current, Surface Mount Inductor

SMD Magnetics Packaging Methods

ATM LAYER SOLUTION

DESCRIPTION The S/UNI-ATLAS-1K800 is a bi-directional ATM Layer device that implements the ATM layer functions including header translation, policing, fault management, performance monitoring, per-connection and per-PHY counting. The S/UNIATLAS-1K800 is intended to be situated between a switch co

ATM LAYER SOLUTION

DESCRIPTION The S/UNI-ATLAS-1K800 is a bi-directional ATM Layer device that implements the ATM layer functions including header translation, policing, fault management, performance monitoring, per-connection and per-PHY counting. The S/UNIATLAS-1K800 is intended to be situated between a switch co

SINGLE PHASE DC BRUSHLESS MOTOR DRIVER IC

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ATM Layer Solution

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