IRF730A价格
参考价格:¥4.5042
型号:IRF730APBF 品牌:Vishay 备注:这里有IRF730A多少钱,2026年最近7天走势,今日出价,今日竞价,IRF730A批发/采购报价,IRF730A行情走势销售排行榜,IRF730A报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF730A | Power MOSFET FEATURES • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified (See AN1001) • Lead (Pb)-free Available APPLICATIONS • Swi | VISHAYVishay Siliconix 威世威世科技公司 | ||
IRF730A | SMPS MOSFET SMPS MOSFET Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptable Power Supply ● High speed power switching Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and | IRF | ||
IRF730A | Power MOSFET • Low gate charge Qg results in simple drive requirement\n• Improved gate, avalanche and dynamic dV/dt ruggedness\n• Fully characterized capacitance and avalanche voltage and current; | VISHAYVishay Siliconix 威世威世科技公司 | ||
IRF730A | Trans MOSFET N-CH 400V 5.5A 3-Pin(3+Tab) TO-220 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
IRF730A | isc N-Channel MOSFET Transistor 文件:279.89 Kbytes Page:2 Pages | ISC 无锡固电 | ||
IRF730A | Power MOSFET 文件:153.46 Kbytes Page:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | ||
IRF730A | Power MOSFET 文件:286.83 Kbytes Page:9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Powe | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET Low gate charge Qg results in simple drive requirement\nImproved gate, avalanche and dynamic dV/dt ruggedness\nFully characterized capacitance and avalanche voltage and current; | VISHAYVishay Siliconix 威世威世科技公司 | |||
SMPS MOSFET Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High speed power switching Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanch | IRF | |||
HEXFET Power MOSFET (SMPS MOSFET) Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High speed power switching • Lead-Free Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche V | IRF | |||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Powe | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET FEATURES • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified (See AN1001) • Lead (Pb)-free Available APPLICATIONS • Swi | VISHAYVishay Siliconix 威世威世科技公司 | |||
SMPS MOSFET Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High speed power switching • Lead-Free Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche V | IRF | |||
SMPS MOSFET Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High speed power switching Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanch | IRF | |||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Powe | VISHAYVishay Siliconix 威世威世科技公司 | |||
HEXFET Power MOSFET (SMPS MOSFET) Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High speed power switching • Lead-Free Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche V | IRF | |||
SMPS MOSFET Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High speed power switching Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanch | IRF | |||
HEXFET Power MOSFET (SMPS MOSFET) Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High speed power switching • Lead-Free Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche V | IRF | |||
HEXFET Power MOSFET (SMPS MOSFET) Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High speed power switching • Lead-Free Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche V | IRF | |||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Powe | VISHAYVishay Siliconix 威世威世科技公司 | |||
HEXFET Power MOSFET (SMPS MOSFET) Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High speed power switching • Lead-Free Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche V | IRF | |||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Powe | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Powe | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Powe | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET 文件:286.83 Kbytes Page:9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET 文件:153.46 Kbytes Page:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET 文件:153.46 Kbytes Page:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET 文件:153.46 Kbytes Page:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET 文件:234.73 Kbytes Page:10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET 文件:234.73 Kbytes Page:10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
PowerMOS transistor Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The IRF730 is supplied in | PHILIPS 飞利浦 | |||
N - CHANNEL 400V - 0.75 ohm - 5.5A - TO-220 PowerMESH] MOSFET Description The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. General features | STMICROELECTRONICS 意法半导体 | |||
5V STEP-DOWN, CURRENT-MODE PWM DC-DC CONVERTERS DESCRIPTION The ST730A is a 5V output CMOS, step-down switching regulator. The ST730A accepts inputs between 5.2V and 11V and delivers 450mA. Typical efficiencies are 85 to 96. Quiescent supply current is 0.8mA and only 0.3µA in shutdown mode. The output does not exhibit frequency over this spec | STMICROELECTRONICS 意法半导体 | |||
5V STEP-DOWN, CURRENT-MODE PWM DC-DC CONVERTERS DESCRIPTION The ST730A is a 5V output CMOS, step-down switching regulator. The ST730A accepts inputs between 5.2V and 11V and delivers 450mA. Typical efficiencies are 85 to 96. Quiescent supply current is 0.8mA and only 0.3µA in shutdown mode. The output does not exhibit frequency over this spec | STMICROELECTRONICS 意法半导体 | |||
5V STEP-DOWN, CURRENT-MODE PWM DC-DC CONVERTERS DESCRIPTION The ST730A is a 5V output CMOS, step-down switching regulator. The ST730A accepts inputs between 5.2V and 11V and delivers 450mA. Typical efficiencies are 85 to 96. Quiescent supply current is 0.8mA and only 0.3µA in shutdown mode. The output does not exhibit frequency over this spec | STMICROELECTRONICS 意法半导体 |
IRF730A产品属性
- 类型
描述
- Minimum Operating Temperature:
-55°C
- Maximum Power Dissipation:
73000mW
- Maximum Operating Temperature:
150°C
- Maximum Gate Source Voltage:
±30V
- Maximum Drain Source Voltage:
400V
- Maximum Continuous Drain Current:
5.5A
- Configuration:
Single
- Channel Type:
N
- Channel Mode:
Enhancement
- Category:
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR/VISHAY |
20+ |
D2-PAK |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
24+/25+ |
36 |
原装正品现货库存价优 |
|||||
VISHAY |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
IR |
25+ |
TO-263 |
745 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
FAIRCHILD/仙童 |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
25+ |
TO-263 |
30000 |
全新原装现货,价格优势 |
|||
IR |
22+ |
D2-PAK |
9450 |
原装正品,实单请联系 |
|||
ST |
26+ |
TO-220 |
8795 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
VISHAY |
26+ |
原厂封装 |
8900000 |
一级总代理商原厂原装大批量现货
一站式服务 |
IRF730A规格书下载地址
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