HEXFET Power MOSFET

Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The

P-Channel MOSFET

Features VDS (V) = -40V ID = -10.5 A RDS(ON)

HEXFET Power MOSFET

Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The

P-Channel MOSFET

Features VDS (V) = -40V ID = -10.5 A RDS(ON)

P-Channel MOSFET

Features Ultra Low On-Resistance Surface Mount Lead-Free VDS (V) = -40V ID = -10.5 A RDS(ON) 16m (VGS = -10V) RDS(ON) 27m (VGS = -4.5V)

P-Channel Enhancement Mode Power MOSFET

Application ● High power and current handing capability ● Lead free product is acquired ● Surface mount package

-40V P-Channel MOSFET

Features • VDS (V) = -40V • ID = -6.2A(VGS = -10V) • RDS(ON)

HEXFET Power MOSFET

Description New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer wi

HEXFET Power MOSFET

Description New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer wi

采用 SO-8 封装的 IR MOSFET -40 V

Ultra Low On-Resistance

文件：126.72 Kbytes Page：9 Pages

Ultra Low On-Resistance

文件：126.72 Kbytes Page：9 Pages

Ultra Low On-Resistance

文件：126.72 Kbytes Page：9 Pages

P-Channel 30-V (D-S) MOSFET

文件：1.13505 Mbytes Page：9 Pages

Ultra Low On-Resistance

文件：126.72 Kbytes Page：9 Pages

采用 SO-8 封装的 IR MOSFET -40 V

Trench Technology

文件：176.28 Kbytes Page：9 Pages

Trench Technology

文件：176.28 Kbytes Page：9 Pages

P-Channel 40 V (D-S) MOSFET

文件：1.14109 Mbytes Page：9 Pages

40 WATT, 1/4 PENCIL-STYLE SOLDERING IRON

FEATURES AND BENEFITS Ni-Chrome Compression Wound Heating Elements are proven to be the most reliable heating element for maintaining soldering temperature in production environments. Paragon Iron-Clad Lead-Free Soldering Iron Tips Will consistently outperform and outlast ordinary soldering iron

WILMAR??Protective Relays - 700 Series

Several types of Reverse Power Relays are available including relays sensitive to reverse reactive power (KVAR). WILMAR is the leading brand of reverse power relays. Our rugged sealed construction provides con tinuous and reliable operation unaffected by shock, vibration or other severe environmen

WILMAR??Protective Relays - 700 Series w/ Adjustable Time Delay

Reverse Power Relays Several types of Reverse Power Relays are available including relays sensitive to reverse reactive power (KVAR). WILMAR is the leading brand of reverse power relays. Our rugged sealed construction provides continuous and reliable operation unaffected by shock, vibration or ot

NPN medium power transistors

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Wiha Sockets

文件：170.71 Kbytes Page：1 Pages