丝印代码：IRF7240；P-Channel MOSFET

Features Ultra Low On-Resistance Surface Mount Lead-Free VDS (V) = -40V ID = -10.5 A RDS(ON) 16m (VGS = -10V) RDS(ON) 27m (VGS = -4.5V)

丝印代码：IRF7240；P-Channel MOSFET

Features VDS (V) = -40V ID = -10.5 A RDS(ON)

丝印代码：IRF7241；-40V P-Channel MOSFET

Features • VDS (V) = -40V • ID = -6.2A(VGS = -10V) • RDS(ON)

采用 SO-8 封装的 IR MOSFET -40 V

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 符合行业标准的引脚\n• P 通道MOSFET;

P-Channel MOSFET

Features VDS (V) = -40V ID = -10.5 A RDS(ON)

HEXFET Power MOSFET

Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The

HEXFET Power MOSFET

Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The

丝印代码：P16TY；P-Channel Enhancement Mode Power MOSFET

Application ● High power and current handing capability ● Lead free product is acquired ● Surface mount package

HEXFET Power MOSFET

Description New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer wi

采用 SO-8 封装的 IR MOSFET -40 V

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 符合行业标准的引脚\n• P 通道MOSFET;

HEXFET Power MOSFET

Description New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer wi

Ultra Low On-Resistance

文件：126.72 Kbytes Page：9 Pages

Ultra Low On-Resistance

文件：126.72 Kbytes Page：9 Pages

Ultra Low On-Resistance

文件：126.72 Kbytes Page：9 Pages

Ultra Low On-Resistance

文件：126.72 Kbytes Page：9 Pages

P-Channel 30-V (D-S) MOSFET

文件：1.13505 Mbytes Page：9 Pages

Trench Technology

文件：176.28 Kbytes Page：9 Pages

Trench Technology

文件：176.28 Kbytes Page：9 Pages

P-Channel 40 V (D-S) MOSFET

文件：1.14109 Mbytes Page：9 Pages

Very fast high-voltage soft-recovery rectifiers

DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas. FEATU

Integrated Circuit Differential/Cascode Amplifier

Description: The NTE724 is a differential/cascode amplifier in an 8–Lead TO5 type metal can package designed for use in communications and industrial equipment operating at frequencies from dc to 120MHz. Features: • Controlled for Input Offset Voltage, Input Offset Current, and Input Bi

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances res

PLASTIC SILICON PHOTOTRANSISTOR

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