HEXFET Power MOSFET

Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8

HEXFET Power MOSFET

HEXFET Power MOSFET

Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8

Ultra Low On-Resistance

文件：553.16 Kbytes Page：7 Pages

Ultra Low On-Resistance

文件：553.16 Kbytes Page：7 Pages

P-Channel 12-V (D-S) MOSFET

文件：1.5226 Mbytes Page：6 Pages

T-1 Subminiature Lamps

T-1 Subminiature Lamps T-1 Subminiature Short Type Lamps

MALE/FEMALE THREADED STANDOFFS

文件：310.8 Kbytes Page：1 Pages

Inline terminal with two fast analog input channels for connecting strain gauges

文件：385.13 Kbytes Page：22 Pages

ROUND THUMB NUTS

文件：105.72 Kbytes Page：1 Pages

1A 2MHz 5.5V Synchronous Buck Converter

文件：187.07 Kbytes Page：2 Pages