DirectFET Power MOSFET

Description The IRF6633 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geom

RoHs Compliant Containing No Lead and Bromide

Description The IRF6633 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geom

RoHs Compliant Containing No Lead and Bromide

RoHS Compliant

Description The IRF6633APbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

DirectFETTM Power MOSFET

Description The IRF6633APbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

DirectFET

Power MOSFET

Description The IRF6633PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout g

RoHs Compliant Containing No Lead and Bromide

Description The IRF6633 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geom

DirectFET

Power MOSFET

Description The IRF6633PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout g

DirectFET

Power MOSFET

Description The IRF6633PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout g

Low Conduction Losses and Switching Losses

文件：268.81 Kbytes Page：9 Pages

RoHS Compliant

Low Conduction Losses and Switching Losses

文件：268.81 Kbytes Page：9 Pages

Low Conduction Losses and Switching Losses

文件：268.81 Kbytes Page：9 Pages

Low Conduction Losses and Switching Losses

文件：283.34 Kbytes Page：10 Pages

Class K-5

FEATURES/BENEFITS : • Easy to read imprint label for quick recognition and replacement • Low cost for high protection value

Time Delay/Class RK5

FEATURES/BENEFITS : • Time-delay • Current-limiting • AC & DC rated • Optional solid state SmartSpot blown fuse indicator • Time-delay for motor start-ups and transformer inrush currents without nuisance opening • Current-limiting for low peak let-thru current • Rejection-style design prev

Multichannel Digital Upconverter with VersaCREST Crest Reduction Engine

GENERAL DESCRIPTION The AD6633 is a multichannel, wide bandwidth digital upconverter (DUC) with crest factor reduction (CFR) technology, which is available in 4-channel or 6-channel versions. It processes 20-bit baseband input data and generates 18-bit, wideband, real, or complex output data at u

22 (7/30) AWG Tinned Copper

文件：406.85 Kbytes Page：4 Pages

6630B Series Single-Output, 80-100 W GPIB Power Supplies

文件：692.07 Kbytes Page：6 Pages