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型号 功能描述 生产厂家 企业 LOGO 操作
IRF6604

Power MOSFET

Description The IRF6604 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with e

IRF

IRF6604

Application Specific MOSFETs

Description The IRF6604 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with e

IRF

IRF6604

Application Specific MOSFETs

INFINEON

英飞凌

Application Specific MOSFETs

Description The IRF6604 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with e

IRF

60 W XENON FLASH LAMP SERIES

FEATURES ■ High Stability: Fluctuation (p-p) 3 Max. ■ High Input Energy: 1 J (per one flash) ■ Long Life: 8 × 107 flashes Min. ■ Short Arc: 3 mm ■ Spectral Distribution: 190 nm to 2000 nm (Sapphire glass window type) ■ High Repetition Rate Meeting TV rate: 60 Hz ■ Short flash pulse-width (

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

Ultrahigh-Speed Switching Applications

N-Channel Silicon MOSFET Features • Low ON-resistance. • Ultrahigh-speed switching. • 1.5V drive. • Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.

SANYO

三洋

4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

9 AMP ADJUSTABLE INTEGRATED SWITCHING REGULATOR

文件:242.23 Kbytes Page:5 Pages

TI

德州仪器

IRF6604产品属性

  • 类型

    描述

  • 型号

    IRF6604

  • 功能描述

    MOSFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-3-17 19:03:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
25+
QFN
23290
全新原装现货特价销售,欢迎来电查询
IR
20+
SMD
32970
原装优势主营型号-可开原型号增税票
Infineon Technologies
22+
DirectFET? Isometric MQ
9000
原厂渠道,现货配单
90
F
IR
639
92
IOR
25+
DirectFET?;(
2987
绝对全新原装现货供应!
IR
2223+
639
26800
只做原装正品假一赔十为客户做到零风险
IR
25+
897
公司优势库存 热卖中!
IR
25+
DIRECTFET
30000
代理全新原装现货,价格优势
IR
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
IR
2450+
SMD
8850
只做原装正品假一赔十为客户做到零风险!!

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