Power MOSFET

Description The IRF6604 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with e

Application Specific MOSFETs

Description The IRF6604 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with e

Application Specific MOSFETs

Description The IRF6604 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with e

PHASE SHIFTER DC TO 2, 4 AND 8 GHZ, COAXIAL HIGH POWER

FEATURES • Type N Connectors Standard • Options from DC to 8Ghz • High Power, Trombone Style Coaxial Structure • Military Grade Materials and Processing • -40 to + 125º C Operating Temperature Range

N and P-Channel Enhancement Mode Power MOSFET

Product Summary N-Channel VDS= 20V ID= 3.4A (VGS=4.5V) RDS(ON)

Gepco a Belden Brand, Analog Audio Cable

Product Description Gepco a Belden Brand, Analog Audio Cable, 4 Pair 22 AWG (7x30) Bare Copper conductors, FEP Insulation, Individually Shielded, PVDF Jacket, CMP rated

PHASE SHIFTER DC TO 2, 4 AND 8 GHz, COAXIAL HIGH POWER

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N-Channel Enhancement Mode Power MOSFET

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