位置:首页 > IC中文资料第722页 > IRF640B

型号 功能描述 生产厂家 企业 LOGO 操作
IRF640B

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

FAIRCHILD

仙童半导体

IRF640B

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

KERSEMI

High Current Transistors(PNP Silicon)

High Current Transistors PNP Silicon

ONSEMI

安森美半导体

High Current Transistors

High Current Transistors PNP Silicon

MOTOROLA

摩托罗拉

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

SCHOTTKY BARRIER RECTIFIERS 6 AMPERES 20 TO 60 VOLTS . . . in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Extremely Fast Switching • Extremely Low Forward Drop • Platinum Barrier with Avalanche Guardrings • Gua

MOTOROLA

摩托罗拉

ISOLATION SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 60 Volts CURRENT - 6 Ampere)

VOLTAGE 20 to 60 Volts CURRENT 6.0 Ampers FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency.

PANJIT

強茂

DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes)

VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier majority carrier conduction • Low power los

PANJIT

強茂

IRF640B产品属性

  • 类型

    描述

  • 型号

    IRF640B

  • 功能描述

    MOSFET 200V Single

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-5-18 16:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD
24+
TO-220-3
8866
N/A
SOP
630
正品原装--自家现货-实单可谈
FCS
25+
TO-220
2987
只售原装自家现货!诚信经营!欢迎来电!
FSC
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
FSC
22+
TO-220
5000
全新原装现货!自家库存!
IR
14+
TO220
75
全新 发货1-2天
FAIRCHILD
25+23+
TO220
13397
绝对原装正品全新进口深圳现货
FSC
17+
TO-220
6200
N/A
20+
SOP
2960
诚信交易大量库存现货
仙童
06+
TO-220
5000
原装

IRF640B数据表相关新闻