33A, 100V, 0.040 Ohm, N-Channel, Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON)= 0.040Ω, VGS=10V • Simulation Models - Temperature Compensated PSPICE™ and SABER Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve

33A, 100V, 0.040 Ohm, N-Channel Power MOSFET

Features 1. Ultra Low On-Resistance -rDS(ON)= 0.040Ω,VGS=10V 2. Simulation Models - Temperature Compensated PSPICE™ and SABER©Electrical Models - Spice and SABER©Thermal Impedance Models 3. Peak Current vs Pulse Width Curve 4. UIS Rating Curve

Power MOSFET(Vdss=100V, Rds(on)=44mohm, Id=33A)

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

N-Channel Mosfet Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.044Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operat

Advanced Process Technology

VDSS = 100V RDS(on) = 44mΩ ID = 33A Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance througho

采用 TO-220 封装的 100V 单 N 沟道功率 MOSFET

N-Channel MOSFET Transistor

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SEMICONDUCTORS

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Isc N-Channel MOSFET Transistor

• FEATURES • With To-262 package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

Power MOSFET(Vdss=100V, Rds(on)=44mohm, Id=33A)

Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the de

Ultra Low On-Resistance

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

HEXFET짰 Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

HEXFET Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

N-Channel 100-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package

Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

N-Channel MOSFET

■ Features ● VDS (V) = 100V ● ID = 33 A (VGS = 10V) ● RDS(ON)

Power MOSFET(Vdss=100V, Rds(on)=44mohm, Id=33A)

Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the de

Ultra Low On-Resistance

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

HEXFET짰 Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

N-Channel 100-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package

N-Channel MOSFET Transistor

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HEXFET짰 Power MOSFET

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100V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-262 封装

Advanced Process Technology

文件：284.98 Kbytes Page：11 Pages

Advanced Process Technology

文件：284.98 Kbytes Page：11 Pages

Advanced Process Technology

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Advanced Process Technology

文件：159.02 Kbytes Page：9 Pages

HEXFET짰 Power MOSFET

文件：274.28 Kbytes Page：10 Pages

100V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

HEXFET짰 Power MOSFET

文件：274.28 Kbytes Page：10 Pages

Advanced Process Technology

文件：284.98 Kbytes Page：11 Pages

Advanced Process Technology

文件：284.98 Kbytes Page：11 Pages

Advanced Process Technology

文件：284.98 Kbytes Page：11 Pages

Advanced Process Technology

文件：284.98 Kbytes Page：11 Pages

Advanced Process Technology

文件：284.98 Kbytes Page：11 Pages

Advanced Process Technology

文件：284.98 Kbytes Page：11 Pages

Pentium 4 Processors Supporting Hyper-Threading Technology

Introduction The Intel® Pentium® 4 processor on 90 nm process in the 775-land package is a follow on to the Pentium 4 processor in the 478-pin package with enhancements to the Intel NetBurst® microarchitecture. The Pentium 4 processor on 90 nm process in the 775-land package uses FlipChip Land Gr

PISTON SEALS

DESCRIPTION The BECA 540 profile is a single acting piston seal composed of a profiled, filled PTFE U-ring type seal and a V-spring that is resistant to corrosion. The BECA 549 profile is specially designed for applications where the seal is in contact with food products. It is characteri

Security & Sound, #20-20c, BC, CMR

Product Description Security & Sound Cable, Riser-CMR, 20-20 AWG stranded bare copper conductors with PVC insulation, PVC jacket with ripcord

Ethernet Modbus TCP to 32 Open-Collector Outputs

Features • 10/100BaseT Ethernet Modbus TCP interface • 32 open collector outputs • Removable screw terminals simplify field wiring • Status indicator LEDs for Communication, Fault, and Power • Input power via terminal block or modular connector • Optional DIN rail or table mount • Sealevel

5MM LED

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