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IRF540NSPBF中文资料
IRF540NSPBF数据手册规格书PDF详情
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF540NL) is available for low profile applications.
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
IRF540NSPBF产品属性
- 类型
描述
- 型号
IRF540NSPBF
- 功能描述
MOSFET 100V 1 N-CH HEXFET 44mOhms 47.3nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
25+ |
TO-263 |
32360 |
INFINEON/英飞凌全新特价IRF540NSPBF即刻询购立享优惠#长期有货 |
|||
IR |
23+ |
D2-PAK |
65400 |
||||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
IR |
24+/25+ |
20 |
原装正品现货库存价优 |
||||
IR |
24+ |
SOP-263 |
15780 |
||||
IR |
17+ |
TO-263 |
6200 |
||||
IR |
24+ |
D2-PAK |
1000 |
原装现货假一罚十 |
|||
IR |
23+ |
D2-PAK |
5000 |
原装正品,假一罚十 |
|||
IR |
25+ |
TO263 |
28 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
IR |
24+ |
原装 |
6980 |
原装现货,可开13%税票 |
IRF540NSPBF 价格
参考价格:¥1.7836
IRF540NSPBF 资料下载更多...
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