isc N-Channel MOSFET Transistor

• DESCRITION • Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. • FEATURES • Low RDS(on) • VGS Rated at ±20V • Silicon Gate for Fast Switching Speed • Rugged • Low Drive Require

N-Channel Power MOSFETs, 11 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. • Low RDs

IRF120-123/IRF520-523 MTP10N08/10N10 N-Channel Power MOSFETs

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. • Low RDs

N-Channel Power MOSFETs, 11 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. • Low RDs

N-Channel Power MOSFETs, 11 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. • Low RDs

N - CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs Applications □ Motor control □ Converters □ Amplifiers □ Switches □ Power supply circuits □ Drivers (Relays, Hammers, Solenoides, Lamps, Memeories, Displays, Bipolar Transistors, etc.)

N-Channel Power Mosfets,

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Trans MOSFET N-CH 100V 7A 3-Pin(3+Tab) TO-220AB

SEMICONDUCTORS

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N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ■ TYPICAL RDS(on) = 0.23 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE APPLICATIONS ■ HIGH CURRENT, HIGH SPE

Trans MOSFET N-CH 100V 7A 3-Pin(3+Tab) TO-220AB

7 AMPERES DARLINGTON POWER TRANSISTORS NPN SILICON 450 VOLTS 75 WATTS

Power Transistor mainly intended for use as ignition circuit output transistor. • Specified minimum sustaining voltage: VCER(sus) = 425 V at IC = 1 A • High S.O.A. capability: VCE = 400 V • Low VCE(sat) = 2.0 V max. at IC = 4 A

Wideband Variable-Gain Amplifier

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Wideband Variable-Gain Amplifier

文件：281.06 Kbytes Page：8 Pages

Wideband Variable-Gain Amplifier

文件：281.06 Kbytes Page：8 Pages

Wideband Variable-Gain Amplifier

文件：281.06 Kbytes Page：8 Pages