位置:首页 > IC中文资料第250页 > IRF433
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF433 | N-Channel Power MOSFETs, 4.5 A, 450V/500V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VGS Rated at ± 20V • Silicon Gate for Fast Switchi | FAIRCHILD 仙童半导体 | ||
IRF433 | N-CHANNEL POWER MOSFETS FEATURES • Low RDs(on) at high voltage • Improved inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysilicon gate cell structure • Low input capactiance • Extended safe operating area • Improved high temperature reliablitiy • TO-3 package (High vol | SAMSUNG 三星 | ||
IRF433 | isc N-Channel MOSFET Transistor DESCRIPTION • silicon Gate for fast switching at elevate • rugged • low drive requirements • ease of paralleling APPLICATIONS • high speed applications such as Switching power supplies,AC and DCmotor controls relay and solenoid driver. | ISC 无锡固电 | ||
IRF433 | N-Channel Power MOSFETs, 4.5 A, 450 V/500 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VGS Rated at ± 20V • Silicon Gate for Fast Switchi | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
IRF433 | Trans MOSFET N-CH 450V 4A 3-Pin (2+Tab) TO-3 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
IRF433 | N-Channel Power MOSFETs, 4.5 A, 450 V/500 V 文件:122.44 Kbytes Page:3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
LC2MOS Precision Quad SPST Switches GENERAL DESCRIPTION The ADG431, ADG432 and ADG433 are monolithic CMOS devices comprising four independently selectable switches. They are designed on an enhanced LC2MOS process which provides low power dissipation yet gives high switching speed and low on resistance. The on resistance profile is | AD 亚德诺 | |||
PNP SILICON EPIBASE TRANSISTORS PNP Silicon Epibase Transistors | SIEMENS 西门子 | |||
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. The BD433 is especially suitable for use in car-radio output stages. The complementary PNP types are BD43 | STMICROELECTRONICS 意法半导体 | |||
1.0 mm X 4.0 mm Series 文件:32.03 Kbytes Page:1 Pages | PANASONIC 松下 |
IRF433产品属性
- 类型
描述
- 型号
IRF433
- 制造商
Rochester Electronics LLC
- 功能描述
- Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2016+ |
TO204AA |
2500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
25+ |
长期备有现货 |
500000 |
行业低价,代理渠道 |
||||
IR |
23+ |
TO-3 |
5000 |
原装正品,假一罚十 |
|||
mospec |
24+ |
N/A |
6980 |
原装现货,可开13%税票 |
|||
23+ |
65480 |
||||||
IR |
22+ |
BGA |
8000 |
原装正品支持实单 |
|||
IR |
23+ |
TO-3 |
7000 |
||||
IR |
24+ |
66800 |
原厂授权一级代理,专注汽车、医疗、工业、新能源! |
||||
RCA |
86+ |
TO |
19 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
24+ |
TO-3 |
10000 |
IRF433规格书下载地址
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2021-8-9IRF521,IRF523,IRF511,IRF512,IRF512S2532,IRF540,IRF540P2,IRF540RP2,IRF541,IRF542,IRF543,IRF531,IRF532,IRF640,IRF640R,IRF640S2470
IRF521,IRF523,IRF511,IRF512,IRF512S2532,IRF540,IRF540P2,IRF540RP2,IRF541,IRF542,IRF543,IRF531,IRF532,IRF640,IRF640R,IRF640S2470
2019-12-17
DdatasheetPDF页码索引
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