N-CHANNEL POWER MOSFETS

FEATURES • Low RDs(on) at high voltage • Improved inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysilicon gate cell structure • Low input capactiance • Extended safe operating area • Improved high temperature reliablitiy • TO-3 package (High vol

N-Channel Power MOSFETs, 4.5 A, 450V/500V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VGS Rated at ± 20V • Silicon Gate for Fast Switchi

isc N-Channel MOSFET Transistor

DESCRIPTION • silicon Gate for fast switching at elevate • rugged • low drive requirements • ease of paralleling APPLICATIONS • high speed applications such as Switching power supplies,AC and DCmotor controls relay and solenoid driver.

N-Channel Power MOSFETs, 4.5 A, 450 V/500 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VGS Rated at ± 20V • Silicon Gate for Fast Switchi

N-Channel Power MOSFETs, 4.5 A, 450 V/500 V

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Ultra Low Jitter 1pS

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Surface Mount Fuses - Thin-Film Surface Mount

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433 High Temperature Aluminium Foil Tape

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SMT GaAs HBT MMIC DIVIDE-BY-4, DC - 8.0 GHz

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SMT GaAs HBT MMIC DIVIDE-BY-4, DC - 8 GHz

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