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型号 功能描述 生产厂家 企业 LOGO 操作
IRF433

N-Channel Power MOSFETs, 4.5 A, 450V/500V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VGS Rated at ± 20V • Silicon Gate for Fast Switchi

FAIRCHILD

仙童半导体

IRF433

N-CHANNEL POWER MOSFETS

FEATURES • Low RDs(on) at high voltage • Improved inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysilicon gate cell structure • Low input capactiance • Extended safe operating area • Improved high temperature reliablitiy • TO-3 package (High vol

SAMSUNG

三星

IRF433

isc N-Channel MOSFET Transistor

DESCRIPTION • silicon Gate for fast switching at elevate • rugged • low drive requirements • ease of paralleling APPLICATIONS • high speed applications such as Switching power supplies,AC and DCmotor controls relay and solenoid driver.

ISC

无锡固电

IRF433

N-Channel Power MOSFETs, 4.5 A, 450 V/500 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VGS Rated at ± 20V • Silicon Gate for Fast Switchi

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF433

Trans MOSFET N-CH 450V 4A 3-Pin (2+Tab) TO-3

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF433

N-Channel Power MOSFETs, 4.5 A, 450 V/500 V

文件:122.44 Kbytes Page:3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

LC2MOS Precision Quad SPST Switches

GENERAL DESCRIPTION The ADG431, ADG432 and ADG433 are monolithic CMOS devices comprising four independently selectable switches. They are designed on an enhanced LC2MOS process which provides low power dissipation yet gives high switching speed and low on resistance. The on resistance profile is

AD

亚德诺

PNP SILICON EPIBASE TRANSISTORS

PNP Silicon Epibase Transistors

SIEMENS

西门子

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. The BD433 is especially suitable for use in car-radio output stages. The complementary PNP types are BD43

STMICROELECTRONICS

意法半导体

1.0 mm X 4.0 mm Series

文件:32.03 Kbytes Page:1 Pages

PANASONIC

松下

IRF433产品属性

  • 类型

    描述

  • 型号

    IRF433

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    - Bulk

更新时间:2026-5-15 15:55:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
2016+
TO204AA
2500
只做原装,假一罚十,公司可开17%增值税发票!
25+
长期备有现货
500000
行业低价,代理渠道
IR
23+
TO-3
5000
原装正品,假一罚十
mospec
24+
N/A
6980
原装现货,可开13%税票
23+
65480
IR
22+
BGA
8000
原装正品支持实单
IR
23+
TO-3
7000
IR
24+
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!
RCA
86+
TO
19
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IR
24+
TO-3
10000

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