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IRF2805价格

参考价格:¥5.3507

型号:IRF2805PBF 品牌:International 备注:这里有IRF2805多少钱,2026年最近7天走势,今日出价,今日竞价,IRF2805批发/采购报价,IRF2805行情走势销售排行榜,IRF2805报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF2805

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

IRF

IRF2805

采用 TO-220 封装的 55V 单 N 沟道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

INFINEON

英飞凌

IRF2805

Climate Control, ABS, Electronic Braking,Windshield Wipers

文件:849.25 Kbytes Page:9 Pages

KERSEMI

IRF2805

N-Channel MOSFET Transistor

文件:338.21 Kbytes Page:2 Pages

ISC

无锡固电

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and im

IRF

HEXFET Power MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and im

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and im

IRF

采用 D2-Pak 封装的 55V 单 N 通道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

INFINEON

英飞凌

HEXFET Power MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and im

IRF

AUTOMOTIVE MOSFET

INFINEON

英飞凌

Industrial Motor Drive

文件:337.26 Kbytes Page:11 Pages

IRF

Advanced Process Technology

文件:270.15 Kbytes Page:9 Pages

IRF

Advanced Process Technology

文件:270.15 Kbytes Page:9 Pages

IRF

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

文件:263.18 Kbytes Page:2 Pages

ISC

无锡固电

Advanced Process Technology

文件:337.26 Kbytes Page:11 Pages

IRF

Industrial Motor Drive

文件:337.26 Kbytes Page:11 Pages

IRF

Advanced Process Technology

文件:337.26 Kbytes Page:11 Pages

IRF

Industrial Motor Drive

文件:337.26 Kbytes Page:11 Pages

IRF

HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SOP PHOTOCOUPLER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

EIGHT DARLINGTON ARRAYS

Description The ULQ2801A-ULQ2804A each contain eight Darlington transistors with common emitters and integral suppression diodes for inductive loads. Each Darlington features a peak load current rating of 600 mA (500 mA continuous) and can withstand at least 50 V in the off state. Outputs may be

STMICROELECTRONICS

意法半导体

Low-Power BiCMOS Current-Mode PWM

文件:383.98 Kbytes Page:20 Pages

TI

德州仪器

Low-Power BiCMOS Current-Mode PWM

文件:383.98 Kbytes Page:20 Pages

TI

德州仪器

Low-Power BiCMOS Current-Mode PWM

文件:383.98 Kbytes Page:20 Pages

TI

德州仪器

IRF2805产品属性

  • 类型

    描述

  • OPN:

    IRF2805PBF

  • Qualification:

    Non-Automotive

  • Package name:

    TO220

  • VDS max:

    55 V

  • RDS (on) @10V max:

    4.7 mΩ

  • ID @25°C max:

    175 A

  • QG typ @10V:

    150 nC

  • Special Features:

    Wide SOA

  • Polarity:

    N

  • VGS(th) min:

    2 V

  • VGS(th) max:

    4 V

  • VGS(th):

    3 V

  • Technology:

    IR MOSFET™

更新时间:2026-5-25 11:34:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
25+
TO-220
20300
INFINEON/英飞凌原装特价IRF2805PBF即刻询购立享优惠#长期有货
IR
23+
TO-220
65400
Infineon(英飞凌)
25+
D2PAK
18798
原装正品现货,原厂订货,可支持含税原型号开票。
IR
25+
TO-263
12500
全新原装现货,假一赔十
IR
25+
TO-263
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
INFINEON/英飞凌
15+
明嘉莱只做原装正品现货
2510000
TO-263
IR
2021+
TO-263
9450
原装现货。
IR
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
Infineon(英飞凌)
25+
D2PAK
18798
原装正品现货,原厂订货,可支持含税原型号开票。
IR
1745+
TO-263
114
只做原装,可开13个点税票

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