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IRF2804价格

参考价格:¥10.1629

型号:IRF2804LPBF 品牌:International 备注:这里有IRF2804多少钱,2026年最近7天走势,今日出价,今日竞价,IRF2804批发/采购报价,IRF2804行情走势销售排行榜,IRF2804报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF2804

HEXFET Power MOSFET

VDSS = 40V RDS(on) = 2.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope

IRF

IRF2804

采用 TO-220 封装的 40V 单 N 沟道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 快速开关\n• 175°C 的工作温度\n \n  ;

INFINEON

英飞凌

IRF2804

Advanced Process Technology

文件:285.49 Kbytes Page:13 Pages

IRF

IRF2804

N-Channel MOSFET Transistor

文件:339.11 Kbytes Page:2 Pages

ISC

无锡固电

HEXFET Power MOSFET

VDSS = 40V RDS(on) = 2.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

HEXFET Power MOSFET

VDSS = 40V RDS(on) = 2.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope

IRF

采用 D2-Pak 封装的 40V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 快速开关\n• 175°C 的工作温度;

INFINEON

英飞凌

40V 单 N 通道 HEXFET 功率 MOSFET,采用 7 针 D2Pak 封装。

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 快速开关\n• 175°C 的工作温度;

INFINEON

英飞凌

AUTOMOTIVE MOSFET

VDSS = 40V RDS(on) = 1.6mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve

IRF

HEXFET짰 Power MOSFET

VDSS = 40V RDS(on) = 1.6mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

Advanced Process Technology

文件:285.49 Kbytes Page:13 Pages

IRF

Advanced Process Technology

文件:414.11 Kbytes Page:12 Pages

IRF

HEXFET짰 Power MOSFET

文件:414.11 Kbytes Page:12 Pages

IRF

Advanced Process Technology

文件:414.11 Kbytes Page:12 Pages

IRF

Advanced Process Technology

文件:285.49 Kbytes Page:13 Pages

IRF

Advanced Process Technology

文件:298.26 Kbytes Page:11 Pages

IRF

Advanced Process Technology

文件:286.19 Kbytes Page:10 Pages

IRF

Advanced Process Technology

文件:286.19 Kbytes Page:10 Pages

IRF

Advanced Process Technology

文件:285.49 Kbytes Page:13 Pages

IRF

Advanced Process Technology

文件:298.26 Kbytes Page:11 Pages

IRF

OCTAL PERIPHERAL DRIVER ARRAYS

Octal High Voltage, High Current Darlington Transistor Arrays The eight NPN Darlington connected transistors in this family of arrays are ideally suited for interfacing between low logic level digital circuitry (such as TTL, CMOS or PMOS/NMOS) and the higher current/voltage requirements of lamps,

ONSEMI

安森美半导体

EIGHT DARLINGTON ARRAYS

Description The ULQ2801A-ULQ2804A each contain eight Darlington transistors with common emitters and integral suppression diodes for inductive loads. Each Darlington features a peak load current rating of 600 mA (500 mA continuous) and can withstand at least 50 V in the off state. Outputs may be

STMICROELECTRONICS

意法半导体

Low-Power BiCMOS Current-Mode PWM

文件:383.98 Kbytes Page:20 Pages

TI

德州仪器

Low-Power BiCMOS Current-Mode PWM

文件:383.98 Kbytes Page:20 Pages

TI

德州仪器

Low-Power BiCMOS Current-Mode PWM

文件:383.98 Kbytes Page:20 Pages

TI

德州仪器

IRF2804产品属性

  • 类型

    描述

  • OPN:

    IRF2804PBF

  • Qualification:

    Non-Automotive

  • Package name:

    TO220

  • VDS max:

    40 V

  • RDS (on) @10V max:

    2.3 mΩ

  • ID @25°C max:

    270 A

  • QG typ @10V:

    160 nC

  • Polarity:

    N

  • VGS(th) min:

    2 V

  • VGS(th) max:

    4 V

  • VGS(th):

    3 V

  • Technology:

    IR MOSFET™

更新时间:2026-5-15 17:11:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
22+
原厂封装
15850
原装正品,实单请联系
IR
25+
TO-220AB
70000
全新原装现货特价销售,欢迎来电查询
IR
25+
TO-263
12600
保证进口原装现货假一赔十
INFINEON
25+
TO-220
918000
明嘉莱只做原装正品现货
Infineon(英飞凌)
25+
D2PAK
22412
原装正品现货,原厂订货,可支持含税原型号开票。
IR
25+
TO-220
6000
全新原装现货、诚信经营!
IR
25+
TO-263
25000
代理原装现货,假一赔十
IR
21+
TO220
2000
全新原装 鄙视假货
IR/INFINEON
25+
TO-220
5715
只做原装 有挂有货 假一罚十
INFINEON
25+
TO220
6500
十七年专营原装现货一手货源,样品免费送

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