IRF2804价格
参考价格:¥10.1629
型号:IRF2804LPBF 品牌:International 备注:这里有IRF2804多少钱,2026年最近7天走势,今日出价,今日竞价,IRF2804批发/采购报价,IRF2804行情走势销售排行榜,IRF2804报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF2804 | HEXFET Power MOSFET VDSS = 40V RDS(on) = 2.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope | IRF | ||
IRF2804 | 采用 TO-220 封装的 40V 单 N 沟道功率 MOSFET \n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 快速开关\n• 175°C 的工作温度\n \n ; | INFINEON 英飞凌 | ||
IRF2804 | Advanced Process Technology 文件:285.49 Kbytes Page:13 Pages | IRF | ||
IRF2804 | N-Channel MOSFET Transistor 文件:339.11 Kbytes Page:2 Pages | ISC 无锡固电 | ||
HEXFET Power MOSFET VDSS = 40V RDS(on) = 2.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope | IRF | |||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | |||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | |||
HEXFET Power MOSFET VDSS = 40V RDS(on) = 2.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope | IRF | |||
采用 D2-Pak 封装的 40V 单 N 通道 HEXFET 功率 MOSFET \n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 快速开关\n• 175°C 的工作温度; | INFINEON 英飞凌 | |||
40V 单 N 通道 HEXFET 功率 MOSFET,采用 7 针 D2Pak 封装。 \n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 快速开关\n• 175°C 的工作温度; | INFINEON 英飞凌 | |||
AUTOMOTIVE MOSFET VDSS = 40V RDS(on) = 1.6mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve | IRF | |||
HEXFET짰 Power MOSFET VDSS = 40V RDS(on) = 1.6mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve | IRF | |||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | |||
Advanced Process Technology 文件:285.49 Kbytes Page:13 Pages | IRF | |||
Advanced Process Technology 文件:414.11 Kbytes Page:12 Pages | IRF | |||
HEXFET짰 Power MOSFET 文件:414.11 Kbytes Page:12 Pages | IRF | |||
Advanced Process Technology 文件:414.11 Kbytes Page:12 Pages | IRF | |||
Advanced Process Technology 文件:285.49 Kbytes Page:13 Pages | IRF | |||
Advanced Process Technology 文件:298.26 Kbytes Page:11 Pages | IRF | |||
Advanced Process Technology 文件:286.19 Kbytes Page:10 Pages | IRF | |||
Advanced Process Technology 文件:286.19 Kbytes Page:10 Pages | IRF | |||
Advanced Process Technology 文件:285.49 Kbytes Page:13 Pages | IRF | |||
Advanced Process Technology 文件:298.26 Kbytes Page:11 Pages | IRF | |||
OCTAL PERIPHERAL DRIVER ARRAYS Octal High Voltage, High Current Darlington Transistor Arrays The eight NPN Darlington connected transistors in this family of arrays are ideally suited for interfacing between low logic level digital circuitry (such as TTL, CMOS or PMOS/NMOS) and the higher current/voltage requirements of lamps, | ONSEMI 安森美半导体 | |||
EIGHT DARLINGTON ARRAYS Description The ULQ2801A-ULQ2804A each contain eight Darlington transistors with common emitters and integral suppression diodes for inductive loads. Each Darlington features a peak load current rating of 600 mA (500 mA continuous) and can withstand at least 50 V in the off state. Outputs may be | STMICROELECTRONICS 意法半导体 | |||
Low-Power BiCMOS Current-Mode PWM 文件:383.98 Kbytes Page:20 Pages | TI 德州仪器 | |||
Low-Power BiCMOS Current-Mode PWM 文件:383.98 Kbytes Page:20 Pages | TI 德州仪器 | |||
Low-Power BiCMOS Current-Mode PWM 文件:383.98 Kbytes Page:20 Pages | TI 德州仪器 |
IRF2804产品属性
- 类型
描述
- OPN:
IRF2804PBF
- Qualification:
Non-Automotive
- Package name:
TO220
- VDS max:
40 V
- RDS (on) @10V max:
2.3 mΩ
- ID @25°C max:
270 A
- QG typ @10V:
160 nC
- Polarity:
N
- VGS(th) min:
2 V
- VGS(th) max:
4 V
- VGS(th):
3 V
- Technology:
IR MOSFET™
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
原厂封装 |
15850 |
原装正品,实单请联系 |
|||
IR |
25+ |
TO-220AB |
70000 |
全新原装现货特价销售,欢迎来电查询 |
|||
IR |
25+ |
TO-263 |
12600 |
保证进口原装现货假一赔十 |
|||
INFINEON |
25+ |
TO-220 |
918000 |
明嘉莱只做原装正品现货 |
|||
Infineon(英飞凌) |
25+ |
D2PAK |
22412 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
IR |
25+ |
TO-220 |
6000 |
全新原装现货、诚信经营! |
|||
IR |
25+ |
TO-263 |
25000 |
代理原装现货,假一赔十 |
|||
IR |
21+ |
TO220 |
2000 |
全新原装 鄙视假货 |
|||
IR/INFINEON |
25+ |
TO-220 |
5715 |
只做原装 有挂有货 假一罚十 |
|||
INFINEON |
25+ |
TO220 |
6500 |
十七年专营原装现货一手货源,样品免费送 |
IRF2804规格书下载地址
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深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱:yulin522@126.com 0755-83200050 15817287769 柯先生
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DdatasheetPDF页码索引
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