8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

Nanosecond Switching speeds

DESCRIPTION • Drain Current ID=8.1A@ TC=25℃ • Drain Source Voltage- : VDSS= 250V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.45Ω(Max) • Nanosecond Switching speeds APPLICATIONS • Switching power supplies • Switching converters,motor driver,relay driver • Drivers for high-

Trans MOSFET N-CH 250V 8.4A 3-Pin(2+Tab) TO-3

SILICON PNP TRANSISTOR

DESCRIPTION The BD234 is a silicon epitaxial-base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. ■ SGS-THOMSON PREFERRED SALESTYPE ■ PNP TRANSISTOR

THREE TERMINAL ADJUSTABLE CURRENT SOURCES

Description The LM134/LM234/LM334 are 3-terminal adjustable current sources characterized by: ■ an operating current range of 10000: 1 ■ an excellent current regulation ■ a wide dynamic voltage range of 1V t 10V The current is determined by an external resistor without requiring oth

THREE TERMINAL ADJUSTABLE CURRENT SOURCES

Description The LM134/LM234/LM334 are 3-terminal adjustable current sources characterized by: ■ an operating current range of 10000: 1 ■ an excellent current regulation ■ a wide dynamic voltage range of 1V t 10V The current is determined by an external resistor without requiring oth

Silicon PNP Transistor Low Noise, High Gain Amplifier

Description: The NTE234 is a silicon PNP transistor in a TO92 type package designed especially for low noise preamplifier and small signal industrial amplifier applications. This device features low collector satu ration voltage, tight beta control, and excellent low noise characteristics

3-Terminal Adjustable Current Sources

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