| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF231 | N-Channel Power MOSFETs, 12A, 150-200 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V | FAIRCHILD 仙童半导体 | ||
IRF231 | N-CHANNEL POWER MOSFETS FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (Standard) | SAMSUNG 三星 | ||
IRF231 | 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica | INTERSIL | ||
IRF231 | N-Channel Power MOSFETs, 12 A, 150-200 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V ● | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
IRF231 | N-Channel Power MOSFETs, 12 A, 150-200 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V ● | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
IRF231 | High Power,High Speed Applications 文件:48.2 Kbytes Page:2 Pages | ISC 无锡固电 | ||
IRF231 | N-Channel Power Mosfets 文件:155.57 Kbytes Page:6 Pages | ARTSCHIP | ||
Trans MOSFET N-CH 150V 9A 3-Pin(2+Tab) TO-3 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Fast Settling, Wideband Buff-Amp??(Av = 짹1 to 짹5) 文件:396.7 Kbytes Page:6 Pages | NSC 国半 | |||
Fast Settling, Wideband Buff-Amp??(Av = 짹1 to 짹5) 文件:396.7 Kbytes Page:6 Pages | NSC 国半 | |||
Fast Settling, Wideband Buff-Amp??(Av = 짹1 to 짹5) 文件:396.7 Kbytes Page:6 Pages | NSC 国半 | |||
Precision Voltage-to-Frequency Converters 文件:368.44 Kbytes Page:15 Pages | NSC 国半 | |||
Precision Voltage-to-Frequency Converters 文件:280 Kbytes Page:16 Pages | NSC 国半 |
IRF231产品属性
- 类型
描述
- Maximum Power Dissipation:
73000mW
- Maximum Drain Source Voltage:
150V
- Maximum Continuous Drain Current:
9A
- Configuration:
Single
- Channel Type:
N
- Category:
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
IR |
2015+ |
TO-3(铁帽) |
19889 |
一级代理原装现货,特价热卖! |
|||
IR |
24+ |
TO-3 |
10000 |
||||
MOT |
25+ |
52 |
公司优势库存 热卖中! |
||||
IR |
22+ |
TO-3 |
20000 |
公司只做原装 品质保障 |
|||
INTERNATIONA |
05+ |
原厂原装 |
4246 |
只做全新原装真实现货供应 |
|||
NJS |
23+ |
65480 |
|||||
VISAHY |
专业铁帽 |
TO-3 |
1000 |
原装铁帽专营,代理渠道量大可订货 |
|||
IR |
23+ |
TO-3 |
8000 |
专注配单,只做原装进口现货 |
|||
IR |
23+ |
TO-3 |
7000 |
IRF231规格书下载地址
IRF231参数引脚图相关
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DdatasheetPDF页码索引
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