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型号 功能描述 生产厂家 企业 LOGO 操作
IRF231

N-Channel Power MOSFETs, 12A, 150-200 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V

FAIRCHILD

仙童半导体

IRF231

N-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (Standard)

SAMSUNG

三星

IRF231

8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

INTERSIL

IRF231

N-Channel Power MOSFETs, 12 A, 150-200 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF231

N-Channel Power MOSFETs, 12 A, 150-200 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF231

High Power,High Speed Applications

文件:48.2 Kbytes Page:2 Pages

ISC

无锡固电

IRF231

N-Channel Power Mosfets

文件:155.57 Kbytes Page:6 Pages

ARTSCHIP

Trans MOSFET N-CH 150V 9A 3-Pin(2+Tab) TO-3

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Fast Settling, Wideband Buff-Amp??(Av = 짹1 to 짹5)

文件:396.7 Kbytes Page:6 Pages

NSC

国半

Fast Settling, Wideband Buff-Amp??(Av = 짹1 to 짹5)

文件:396.7 Kbytes Page:6 Pages

NSC

国半

Fast Settling, Wideband Buff-Amp??(Av = 짹1 to 짹5)

文件:396.7 Kbytes Page:6 Pages

NSC

国半

Precision Voltage-to-Frequency Converters

文件:368.44 Kbytes Page:15 Pages

NSC

国半

Precision Voltage-to-Frequency Converters

文件:280 Kbytes Page:16 Pages

NSC

国半

IRF231产品属性

  • 类型

    描述

  • Maximum Power Dissipation:

    73000mW

  • Maximum Drain Source Voltage:

    150V

  • Maximum Continuous Drain Current:

    9A

  • Configuration:

    Single

  • Channel Type:

    N

  • Category:

    Power MOSFET

更新时间:2026-5-14 19:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
专业铁帽
TO-3
67500
铁帽原装主营-可开原型号增税票
IR
2015+
TO-3(铁帽)
19889
一级代理原装现货,特价热卖!
IR
24+
TO-3
10000
MOT
25+
52
公司优势库存 热卖中!
IR
22+
TO-3
20000
公司只做原装 品质保障
INTERNATIONA
05+
原厂原装
4246
只做全新原装真实现货供应
NJS
23+
65480
VISAHY
专业铁帽
TO-3
1000
原装铁帽专营,代理渠道量大可订货
IR
23+
TO-3
8000
专注配单,只做原装进口现货
IR
23+
TO-3
7000

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