Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A??

Description Specifically designed for Automotive applications, this HEXFET® power MOSFET has a 200°C max operating temperature with a Stripe Planar design that utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET®

Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A⑥)

800MHz BAND FRONT-END GaAs MMIC

GENERAL DESCRIPTION NJG1704V is a front-end GaAs MMIC including a LNA, local amplifier and MIXER, designed mainly for 800MHz band cellular phone. NJG1704V exhibits low noise of 1.7dB at low total current consumption of 9.0mA. FEATURES Low voltage operation +2.7V typ. Low current cons

800MHz BAND FRONT-END GaAs MMIC

GENERAL DESCRIPTION NJG1704V is a front-end GaAs MMIC including a LNA, local amplifier and MIXER, designed mainly for 800MHz band cellular phone. NJG1704V exhibits low noise of 1.7dB at low total current consumption of 9.0mA. FEATURES Low voltage operation +2.7V typ. Low current cons

Integrated Circuit Audio Power Amplifier, 1.2W

Features: • Incorporating Automatic Operating Point Stabilizer • Low Noise • Variable Frequency Characteristics • Few External Components Required

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This µPA1704 is N-Channel MOS Field Effect Transistor designed for power management applications and Li-ion battery application. FEATURES • 2.5-V gate drive and low on-resistance RDS(on)1 = 13 mΩ MAX. (VGS = 4.0 V, ID = 5.0 A) RDS(on)2 = 16 mΩ MAX. (VGS = 2.5 V, ID

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This µPA1704 is N-Channel MOS Field Effect Transistor designed for power management applications and Li-ion battery application. FEATURES • 2.5-V gate drive and low on-resistance RDS(on)1 = 13 mΩ MAX. (VGS = 4.0 V, ID = 5.0 A) RDS(on)2 = 16 mΩ MAX. (VGS = 2.5 V, ID