丝印代码：IRF100B201；100 V N-Channel MOSFET

Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant, Halogen-Free VDS=100V ID=192A RDS(ON) (at VGS=10V)

100V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

\n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Optimized for 10V gate-drive voltage (called Normal level)\n• Industry standard through-hole power package\n• High-current carrying capability package (upto 195A, die-size ;

Brushed Motor drive applications

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N-Channel MOSFET Transistor

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N-Channel 100-V (D-S) MOSFET

Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed

N-Channel MOSFET Transistor

文件：338.47 Kbytes Page：2 Pages