Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The HEXSense device provides an accurate fraction of the drain current through the additional tw

Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

HEXFET Power MOSFET

Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The HEXSense device provides an accurate fraction of the drain current through the additional tw

MOSFET N-CH 500V 8A TO-220-5

N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

ULTRAFAST RECTIFIERS 8 AMPERES 200-400-600 VOLTS

. . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • Epoxy Meets U

ULTRAFAST RECTIFIER 8.0 AMPERES 400 VOLTS

. . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 28 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • Epoxy Meets UL94, VO @ 1/8″ • High T

RF POWER TRANSISTOR NPN SILICON

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ULTRAFAST RECTIFIER 8.0 AMPERES 400 VOLTS

文件：107.56 Kbytes Page：6 Pages