位置:首页 > IC中文资料第3548页 > IR6220

型号 功能描述 生产厂家 企业 LOGO 操作
IR6220

INTELLIGENT HIGH SIDE MOSFET POWER SWITCH

General Description: The IR6220 is a 5 terminal monolithic HIGH SIDE SWITCH with built in short circuit, over- temperature, ESD, inductive load turn off capability and diagnostic feedback. Features • PWM Current Limit for Short Circuit Protection • Over-Temperature Protection • Active Output

IRF

IR6220

封装/外壳:TO-220-5 包装:管件 描述:IC PWR DRVR N-CHAN 1:1 TO220AB 集成电路(IC) 配电开关,负载驱动器

INFINEON

英飞凌

IR6220

INTELLIGENT HIGH SIDE MOSFET POWER SWITCH

INFINEON

英飞凌

QUAD DARLINGTON SWITCHES

DESCRIPTION The L6220 monolithic quad darlington switch is designed for high current, highvoltage switching applications. Each of the four switches is controlled by a logic input and all four are controlled by a common inhibit input. All inputs are TTL-compatible for direct connectionto logic cir

STMICROELECTRONICS

意法半导体

QUAD DARLINGTON SWITCHES

DESCRIPTION The L6220 monolithic quad darlington switch is designed for high current, highvoltage switching applications. Each of the four switches is controlled by a logic input and all four are controlled by a common inhibit input. All inputs are TTL-compatible for direct connectionto logic cir

STMICROELECTRONICS

意法半导体

Powerblock Modules

Description: NTE series powerblock modules come in an industry standard package, offering four circuits that can be used singly or as power control building blocks. All models feature highly efficient thermal manage ment for greatly extended cycle life. Features: Industry Standard Pack

NTE

8-BIT MCUs WITH A/D CONVERTER, TWO TIMERS, OSCILLATOR SAFEGUARD & SAFE RESET

INTRODUCTION The ST6208C, 09C, 10C and 20C devices are low cost members of the ST62xx 8-bit HCMOS family of microcontrollers, which is targeted at low to medium complexity applications. All ST62xx devices are based on a building block approach: a common core is surrounded by a number of on-chip p

STMICROELECTRONICS

意法半导体

LOW VOLTAGE 8-BIT ROM MCUs WITH A/D CONVERTER AND 20 PINS

INTRODUCTION The ST6208C, 09C, 10C and 20C devices are low cost members of the ST62xx 8-bit HCMOS family of microcontrollers, which is targeted at low to medium complexity applications. All ST62xx devices are based on a building block approach: a common core is surrounded by a number of on-chip p

STMICROELECTRONICS

意法半导体

IR6220产品属性

  • 类型

    描述

  • 型号

    IR6220

  • 功能描述

    IC DRIVER HIGH SIDE TO-220-5

  • RoHS

  • 类别

    集成电路(IC) >> PMIC - MOSFET,电桥驱动器 - 内部开关

  • 系列

    -

  • 标准包装

    1,000

  • 系列

    -

  • 类型

    高端/低端驱动器

  • 输入类型

    SPI

  • 输出数

    8

  • 导通状态电阻

    850 毫欧,1.6 欧姆 电流 -

  • 输出/通道

    205mA,410mA 电流 -

  • 峰值输出

    500mA,1A

  • 电源电压

    9 V ~ 16 V

  • 工作温度

    -40°C ~ 150°C

  • 安装类型

    表面贴装

  • 封装/外壳

    20-SOIC(0.295,7.50mm 宽)

  • 供应商设备封装

    PG-DSO-20-45

  • 包装

    带卷(TR)

更新时间:2026-8-1 17:24:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
26+
TO-220
890000
一级总代理商原厂原装大批量现货 一站式服务
IR
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
IR
25+
TO220
4500
全新原装、诚信经营、公司现货销售
IR
23+
TO220
2870
绝对全新原装!现货!特价!请放心订购!
IR
24+
TO-220
5000
IR
17+
TO-263
81
全新 发货1-2天
Infineon Technologies
22+
D2Pak (SMD220 5Lead)
9000
原厂渠道,现货配单
IR
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
IR(国际整流器)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
Infineon Technologies
23+
原装
7000

IR6220数据表相关新闻

  • IRF1404PBF

    进口代理

    2025-4-2
  • IR3889MTRPBF

    The IR3889 OptiMOSTM系列IPOL 是一款易于使用、完全集成的 DC-DC 降压稳压器。IR3889 具有板载 PWM 控制器和集成自举二极管的 OptiMOS™ MOSFET 是一种小尺寸解决方案,可提供高效的电力传输。此外,它采用快速恒定导通时间(COT)控制方案,简化了设计工作并实现了快速控制

    2023-11-13
  • IR3899MTRPBF 原装正品.仓库现货

    华富芯深圳智能科技有限公司

    2022-2-7
  • IRA-S210ST01

    IRA-S210ST01,全新原装现货当天发货或门市自取0755-82732291.

    2020-2-17
  • IRF130CHP1100,IRF1310N,IRF1310NL,IRF1310NS,IRF1404PBF

    IRF130CHP1100,IRF1310N,IRF1310NL,IRF1310NS,IRF1404PBF

    2020-1-12
  • IR51H224-自激式半桥

    特点 ·输出功率MOSFET在半桥配置 ·高侧栅极驱动器引导操作设计 ·自举二极管集成包(HD型) ·精确的定时控制两个功率MOSFET匹配延迟获得50%的占空比匹配死区的1.2us ·内部振荡器具有可编程的频率 ·15.6V齐纳钳位VCC的离线运行的半桥式输出是用RT淘汰 ·微功率启动 说明 该IR51H(四)XXX是完整的高电压,高转速,selfoscillating半桥电路.专有的HVIC和闩锁免疫CMOS技术,随着的HEXFET®功率MOSFET技术,使

    2013-2-8