HIGH AND LOW SIDE DRIVER

Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT

High and Low Side Driver

Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT

1200 V高边和低边栅极驱动器IC，具有启用和关断功能

1200 V 高边和低边驱动器 IC,具有典型的 2 A 拉电流和 2.5 A 灌电流，采用 14 引脚 PDIP 封装，适用于 IGBT 和 MOSFET。也有 16 引脚 SOIC 封装可选。 • 专为自举操作设计的浮动通道\n• 容许负瞬态电压高\n• 不受 dV/dt 影响\n• 栅极驱动供电电压范围：12 至 20V\n• 双通道欠压锁定\n• 3.3 V 逻辑兼容\n• 独立的逻辑供电电压范围：3.3 V 至 20 V\n• 逻辑和电源接地 +/- 5 V 偏移\n• 具有下拉的 CMOS 施密特触发输入\n• 逐周期边缘触发关断逻辑\n• 双通道的匹配传播延迟\n• 输出与输入同相\n\n优势:;

封装/外壳：14-DIP（0.300"，7.62mm） 包装：管件 描述：IC GATE DRVR HALF-BRIDGE 14DIP 集成电路（IC） 栅极驱动器

High and Low Side Driver in Die form

Features •Floating channel designed for bootstrap operation •Fully operational to +1200 V •Tolerant to negative transient voltage •dV/dt immune •Gate drive supply range from 12 V to 20 V •Undervoltage lockout for both channels •3.3 V logic compatible •Separate logic supply range from 3.3 V

1200 V high- and low-side gate driver IC bare die for IGBT and MOSFET

• Floating channel up to 1200 V\n• dV/dt immune\n• Undervoltage lockout for both channels\n• Logic supply range from 3.3 V to 20 V\n• Matched propagation delay for channels\n• Safely drive 110 Vac to 380 Vac apps\n• UVLO protection at low supply voltage\n \n\n\n;

High and Low Side Driver in Die form

Features •Floating channel designed for bootstrap operation •Fully operational to +1200 V •Tolerant to negative transient voltage •dV/dt immune •Gate drive supply range from 12 V to 20 V •Undervoltage lockout for both channels •3.3 V logic compatible •Separate logic supply range from 3.3 V

High and Low Side Driver

Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT

High and Low Side Driver

Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT

High and Low Side Driver

Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT

1200 V high-side and low-side gate driver IC with enable and shutdown

1200 V 高边和低边驱动器 IC,具有典型的 2 A 拉电流和 2.5 A 灌电流，采用 16 引脚 SOICWB 封装，适用于 IGBT 和 MOSFET。也有 14 引脚 PDIP 封装可选。 • 专为自举操作设计的浮动通道\n• 完全运行时的电压高达 +1200 V\n• 容许负瞬态电压高\n• 不受 dV/dt 影响\n• 栅极驱动供电电压范围：12 至 20V\n• 双通道欠压锁定\n• 3.3 V 逻辑兼容\n• 独立的逻辑供电电压范围：3.3 V 至 20 V\n• 逻辑和电源接地 +/- 5 V 偏移\n• 具有下拉的 CMOS 施密特触发输入\n• 逐周期边缘触发关断逻辑\n• 双通道的匹配传播延迟\n• 输出与输入同相\n\n优势:;

HIGH AND LOW SIDE DRIVER

Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT

High and Low Side Driver

Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT

HIGH AND LOW SIDE DRIVER

Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT

High and Low Side Driver

文件：1.20988 Mbytes Page：18 Pages

High and Low Side Driver

文件：1.20988 Mbytes Page：18 Pages

封装/外壳：16-SOIC（0.295"，7.50mm 宽） 包装：管件 描述：IC GATE DRVR HALF-BRIDGE 16SOIC 集成电路（IC） 栅极驱动器

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

PNP (SWITCHING APPLICATION)

SWITCHING APPLICATION (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver circuit • Built in bias Resistor (R1=2.2KΩ, R2=47KΩ) • Complement to KSR1213

Infrared Remote Control Transmitter???

DESCRIPTION PT2213 is a remote control transmitter utilizing CMOS Technology specially designed for infrared remote control applications. PT2213 can support up to 64 function keys and provides 2 different kinds of system codes. Pin assignments and application circuit are optimized for easy PCB La

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar transistor For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing

NPN SILICON BIAS RESISTOR TRANSISTOR

文件：150.44 Kbytes Page：12 Pages