位置:首页 > IC中文资料 > IR2136

IR2136价格

参考价格:¥26.6320

型号:IR21362JTRPBF 品牌:IR 备注:这里有IR2136多少钱,2026年最近7天走势,今日出价,今日竞价,IR2136批发/采购报价,IR2136行情走势销售排行榜,IR2136报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IR2136

600 V three-phase gate driver IC with OCP, Enable, and Fault

Description The IR2136x (J&S) are high voltage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or L

INFINEON

英飞凌

IR2136

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

IR2136

600 V three-phase gate driver IC with enable, fault reporting and over current protection

600 V three phase half bridge gate driver IC for IGBTs and MOSFETs with typical 0.2 A source and 0.35 A sink current in PDIP-28 package with junction-isolated level-shift technology. For improved negative transient voltage robustness up to -100 V and 50% lower level shift losses, please check ou • Floating channel designed for bootstrap operation\n• Fully operational to +600 V\n• Tolerant to negative transient voltage, dV/dt immune\n• Gate drive supply range from 10 V to 20 V (IR2136/IR21368), 11.5 V to 20 V (IR21364), or 12 V to 20 V (IR21363/IR21365/IR21366)\n• Under-voltage lockout for a;

INFINEON

英飞凌

IR2136

封装/外壳:28-DIP(0.600",15.24mm) 包装:散装 描述:IC GATE DRVR HALF-BRIDGE 28DIP 集成电路(IC) 栅极驱动器

INFINEON

英飞凌

IR2136

3-PHASE BRIDGE DRIVER

文件:896.92 Kbytes Page:36 Pages

IRF

IR2136

3-PHASE BRIDGE DRIVER

文件:896.92 Kbytes Page:36 Pages

IRF

600 V three-phase gate driver IC with OCP, Enable, and Fault

Description The IR2136x (J&S) are high voltage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or L

INFINEON

英飞凌

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

600 V three-phase gate driver IC with OCP, Enable, and Fault

Description The IR2136x (J&S) are high voltage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or L

INFINEON

英飞凌

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

具有过流保护、启用和故障报告功能的 600 V 三相栅极驱动器 IC

600 V three phase gate driver IC for IGBTs and MOSFETs with typical 0.2 A source and 0.35 A sink current, for 11.1 V/10.9 V UVLO, 400 ns/380 ns propagation delay, and 0.46 VITRIP positive going threshold (VITRIP) in SOIC-28 wide body package with junction-isolated level-shift technology. For improve • Floating channel designed for bootstrap operation\n• Fully operational to +600 V\n• Tolerant to negative transient voltage, dV/dt immune\n• Gate drive supply range from 10 V to 20 V (IR2136/IR21368), 11.5 V to 20 V (IR21364), or 12 V to 20 V (IR21363/IR21365/IR21366)\n• Under-voltage lockout for a;

INFINEON

英飞凌

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

600 V three-phase gate driver IC with OCP, Enable, and Fault

Description The IR2136x (J&S) are high voltage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or L

INFINEON

英飞凌

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

600 V three-phase gate driver IC with OCP, Enable, and Fault

Description The IR2136x (J&S) are high voltage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or L

INFINEON

英飞凌

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

600 V three-phase gate driver IC with OCP, Enable, and Fault

Description The IR2136x (J&S) are high voltage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or L

INFINEON

英飞凌

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

600 V three-phase gate driver IC with OCP, Enable, and Fault

Description The IR2136x (J&S) are high voltage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or L

INFINEON

英飞凌

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

Description The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic constru

IRF

3-PHASE BRIDGE DRIVER

文件:896.92 Kbytes Page:36 Pages

IRF

3-PHASE BRIDGE DRIVER

文件:896.92 Kbytes Page:36 Pages

IRF

3-PHASE BRIDGE DRIVER

文件:902.4 Kbytes Page:36 Pages

IRF

3-PHASE BRIDGE DRIVER

文件:902.4 Kbytes Page:36 Pages

IRF

封装/外壳:44-LCC(J形引线),32 引线 包装:管件 描述:IC GATE DRVR HALF-BRIDGE 44PLCC 集成电路(IC) 栅极驱动器

INFINEON

英飞凌

3-PHASE BRIDGE DRIVER

文件:902.4 Kbytes Page:36 Pages

IRF

IR2136产品属性

  • 类型

    描述

  • Product Status:

    active and preferred

  • Voltage Class:

    600 V

  • Output Current Source min:

    0.12 A

  • Output Current Source:

    0.2 A

  • Output Current Sink min:

    0.25 A

  • Output Current Sink:

    0.35 A

  • Channels:

    6

  • Configuration:

    Three Phase

  • Qualification:

    Industrial

  • Isolation Type:

    Functional levelshift

  • Switch Type:

    IGBT/MOSFET

  • Package name:

    PDIP28

  • UVLO Input Off:

    8.2 V

  • UVLO Output Off:

    8.2 V

  • Turn On Propagation Delay max:

    550 ns

  • Turn On Propagation Delay:

    425 ns

  • Turn On Propagation Delay min:

    300 ns

  • Turn Off Propagation Delay max:

    550 ns

  • Turn Off Propagation Delay:

    400 ns

  • Turn Off Propagation Delay min:

    250 ns

  • Input Vcc min:

    10 V

  • Input Vcc max:

    20 V

  • Output Vbs min:

    10 V

  • Output Vbs max:

    20 V

  • Rise Time max:

    190 ns

  • Rise Time:

    125 ns

  • Fall Time max:

    75 ns

  • Fall Time:

    50 ns

  • UVLO Input On:

    8.9 V

  • UVLO Output On:

    8.9 V

更新时间:2026-5-25 11:34:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
25+
SOP28
32000
INFINEON/英飞凌全新特价IR2136STRPBF即刻询购立享优惠#长期有货
INFINEON/英飞凌
19+
SOP28
4000
只做原装正品
IR
25+
SOP-28
20540
保证进口原装现货假一赔十
Infineon(英飞凌)
25+
SOIC-28-300mil
7589
全新原装现货,支持排单订货,可含税开票
IR
25+
SOP-28
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
IR
2020+
SOP-28
22000
全新原装正品 现货库存 价格优势
IR
23+
SOP-28
25031
##公司100%原装现货,假一罚十!可含税13%免费提供样
International Rectifier(IR)
2024+
28-SOIC
58000
原装现货特价
IR
19+
SOP28
18500
INFINEON
23+
SOP28
10000
全新、原装

IR2136数据表相关新闻

  • IR2132JPBF

    IR2132JPBF

    2023-10-9
  • IR2118STRPBF

    IR2118STRPBF

    2023-7-27
  • IR2136STRPBF公司大量原装正品现货/随时可以发货

    瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务

    2019-4-25
  • IR2127S原装正品现货

    瀚佳科技: 专业销售集成电路IC.单片.内存闪存.二三级管模块等电子元器件.欢迎询价购买。

    2018-12-28
  • IR2151S-半桥驱动器。劳在与RT阶段。可编程振荡频率。 1.2us死区时间在8引脚SOIC封装

    特点 •浮动通道设计为引导操作+600 V全面运作耐瞬态电压负dV / dt的免疫 •欠压锁定 •可编程振荡器频率1.4(逆转录75Ω)CT检查 •匹配的两个通道传播延迟 •低侧输出在第二阶段,用RT 说明 该IR2151是一种高电压,高速度,自激功率MOSFET和IGBT驱动器,带有两 高,低侧参考输出通道。专有HVIC和免疫技术的CMOS锁存使整体加固施工。前面高端功能的可编程振荡器类似于有555定时器。输出驱动器具

    2013-2-9
  • IR2136-3相桥驱动器...

    说明 该IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368公司(J&S)的高votage,高速功率MOSFET与三个独立的高,低侧IGBT驱动器中引用3相应用程序的输出渠道。专有的HVIC技术使整体建筑加固。逻辑输入与CMOS兼容或LSTTL输出,下降到3.3V逻辑。一个电流脱扣功能,终止所有六个输出可从外部电流检测电阻。使能功能可终止所有六个输出同时进行。一个漏极开路的故障信号,表明提供过流或欠压关断发生。过流故障条件被清除后自动编程,通过一个外部RC网络的延迟连接到RCIN输入。输出驱动器具有高脉冲电流缓冲级,最低

    2013-2-9