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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HIGHANDLOWSIDEDRIVER Description TheIR2106/IR21064/IR2107/IR21074arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.Thelogicinputiscompatiblewith | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   | |
HIGHANDLOWSIDEDRIVER Description TheIR2106/IR21064/IR2107/IR21074arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.Thelogicinputiscompatiblewith | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HIGH-SIDEANDLOW-SIDEGATEDRIVERINSO-14(TypeTH) Features -FloatingHigh-SideDriverinBootstrapOperationto600V -DrivesTwoN-ChannelMOSFETsorIGBTsinHalfBridgeConfiguation -OutputsToleranttoNegativeTransients -WideLogicandLow-SideGateDriverSupplyVoltage:10Vto20V -WideLogicSupplyVoltageOffsetVoltage:-5Vto | DIODESDiodes Incorporated 达尔科技 |  | | |
HIGH-SIDEANDLOW-SIDEGATEDRIVERINSO-14 文件：772.33 Kbytes Page：11 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
HIGH-SIDEANDLOW-SIDEGATEDRIVER 文件：617.89 Kbytes Page：11 Pages | DIODESDiodes Incorporated 达尔科技 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
20+ |
SOP |
2960 |
诚信交易大量库存现货 |
|||
IOR |
98+ |
DIP |
3 |
特价热销现货库存100%原装正品欢迎来电订购! |
|||
IR |
21+ |
SOP14 |
37500 |
全新原装现货 |
|||
IR |
SOP14 |
货真价实,假一罚十 |
25000 |
||||
IR |
23+ |
SOP |
90000 |
只做原装 ！全系列供应可长期供货稳定价格优势！ |
|||
IR |
13+ |
14PDIF |
15258 |
原装分销 |
|||
IR |
23+ |
SOP |
35890 |
||||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
IR |
21+ |
DIP14 |
50000 |
终端可免费提供样品,欢迎咨询 |
|||
IR |
22+ |
DIP14 |
9600 |
原装现货,优势供应,支持实单! |
IR21064STRPBF(IR)芯片相关品牌
IR21064STRPBF(IR)规格书下载地址
IR21064STRPBF(IR)参数引脚图相关
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IR21064STRPBF(IR)数据表相关新闻
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IR2104STRPBF
2021-8-9IR2104STRPBF 原装代理现货 可追溯原厂含税出
IR2104STRPBF原装代理现货可追溯原厂含税出
2020-11-9IR2110
IR2110，全新原装当天发货或门市自取0755-82732291.
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IR2111，全新原装当天发货或门市自取0755-82732291.
2019-8-21IR2103-半桥驱动器
说明在IR2103（S）的高电压，高速动力供养高，MOSFET和IGBT驱动器低侧参考输出通道。专有的HVIC免疫和闩锁的CMOS技术使坚固耐用单片建设。逻辑输入兼容标准CMOS或LSTTL输出，下降到3.3V逻辑。输出驱动器具有高脉冲电流缓冲级，设计为最小驱动器跨导。浮动通道可以用来驱动一个N沟道功率MOSFET在高端配置的可在高达600伏或IGBT。特点•浮动通道设计为引导操作+600V全面运作耐瞬态电压负dV/dt的免疫•门极驱动电压范围从10至20V•欠压锁定
2013-2-9
DdatasheetPDF页码索引
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