| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
256KB and 512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms The MPC2104/5/6/7 are designed to provide burstable, high performance L2 cache for the PowerPC 60x microprocessor family in conformance with the PowerPC Reference Platform (PReP) and the PowerPC Common Hardware Reference Platform (CHRP) specifications. These products utilize synchronous or asynchr | MOTOROLA 摩托罗拉 | |||
256KB/512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms The MPC2104P (256KB) and MPC2105P (512KB) are designed to provide burstable, high performance L2 cache for the PowerPC 60x microprocessor family in conformance with the PowerPC Reference Platform (PReP) and the PowerPC Common Hardware Reference Platform (CHRP) specifications. All of these cache m | MOTOROLA 摩托罗拉 | |||
3V AM/FM 1 CHIP TUNER IC (FOR DIGITAL TUNING SYSTEM) TA2104BN, TA2104BFN are AM/FM 1 chip tuner ICs, which are designed for portable Radios and 3V Head phone Radios. | TOSHIBA 东芝 | |||
P-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in | SUTEX |
IR2104TRPBF芯片相关品牌
IR2104TRPBF规格书下载地址
IR2104TRPBF参数引脚图相关
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- IR21053SPBF
- IR21053S
- IR2105
- IR2104STR-VA
- IR2104STRPBF-PH
- IR2104STRPBFIR2104STRPBF
- IR2104STRPBFIC
- IR2104STRPBF4
- IR2104STRPBF/SOP
- IR2104STRPBF/IRS2104STR
- IR2104STRPBF/IR
- IR2104STRPBF(IR)
- IR2104STRPBF
- IR2104STRPB
- IR2104STRLPBF
- IR2104STR
- IR2104ST
- IR2104SPBFTR
- IR2104SPBF
- IR2104S-LF
- IR2104SIR
- IR2104S/SLM2104
- IR2104S(IR)
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IR2104TRPBF数据表相关新闻
IR2110STRPBF
IR2110STRPBF
2023-4-14IR2104STRPBF
IR2104STRPBF
2021-8-9IR2104STRPBF 原装代理现货 可追溯原厂含税出
IR2104STRPBF 原装代理现货 可追溯原厂含税出
2020-11-9IR2110
IR2110,全新原装当天发货或门市自取0755-82732291.
2019-8-25IR2111
IR2111,全新原装当天发货或门市自取0755-82732291.
2019-8-21IR2103-半桥驱动器
说明 在IR2103(S)的高电压,高速动力供养高,MOSFET和IGBT驱动器低侧参考输出通道。专有的HVIC免疫和闩锁的CMOS技术使坚固耐用单片建设。逻辑输入兼容标准CMOS或LSTTL输出,下降到3.3V逻辑。输出驱动器具有高脉冲电流缓冲级,设计为最小驱动器跨导。浮动通道可以用来驱动一个N沟道功率MOSFET在高端配置的可在高达600伏或IGBT。 特点 •浮动通道设计为引导操作+600 V全面运作耐瞬态电压负dV / dt的免疫 •门极驱动电压范围从10至20V •欠压锁定
2013-2-9
DdatasheetPDF页码索引
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