Metal Oxide Semiconductor Field Effect Transistor

文件：1.52349 Mbytes Page：15 Pages

Metal Oxide Semiconductor Field Effect Transistor

文件：1.52349 Mbytes Page：15 Pages

N-Channel MOSFET Transistor

• DESCRIPTION • Combine the experience of the leading SJ MOSFET supplier with high class innovation • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.04Ω ·Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device

N-Channel MOSFET Transistor

• DESCRITION • Suitable for hard and soft switching • FEATURES • Static drain-source on-resistance: RDS(on)≤40mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

N-Channel Super-JMOSFET

FEATURES · Drain Current -ID= 50A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 65mΩ(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Power Factor Correction (PFC)

600V CoolMOS짧 C7 Power Transistor

文件：1.21537 Mbytes Page：14 Pages

Isc N-Channel MOSFET Transistor

文件：244.3 Kbytes Page：2 Pages