extremely low losses due to very low fom rdson qg and eoss

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N-Channel MOSFET Transistor

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500V-900V CoolMOS™ N-Channel Power MOSFET

650VCoolMOSªCFD7SJPowerDevice

Features •Ultra-fastbodydiode •650Vbreakdownvoltage •Best-in-classRDS(on) •Reducedswitchinglosses •LowRDS(on)dependencyovertemperature

650V CoolMOS ™ CFD7 超结 MOSFET 集成快速体二极管，采用 TO-247 封装，是谐振高功率拓扑的完美选择

Super Junction N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free • Fast Recovery Time Applications: • Switch Mode Power Supply(SMPS) • Uninterruptible Power Supply (UPS) • Power Factor Correction (PFC) • AC-DC Switching

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 60A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on): 44mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mo

N-Channel MOSFET Transistor

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