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IPW50R190CE价格
参考价格：￥8.9307
型号：IPW50R190CE 品牌：Infineon 备注：这里有IPW50R190CE多少钱，2025年最近7天走势，今日出价，今日竞价，IPW50R190CE批发/采购报价，IPW50R190CE行情走势销售排行榜，IPW50R190CE报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPW50R190CE | 500V CoolMOS??CE Power MOSFET 500V CoolMOS™ CE Power MOSFET The CoolMOS™ CE is a new technology platform of Infineon’s market leading high voltage power MOSFETs designed according to the revolutionary superjunction (SJ) principle. 500V CE portfolio provides all benefits of a fast switching SJ MOSFET while not sacrificing eas | Infineon 英飞凌 |   | |
IPW50R190CE | 500V Superjunction MOSFET for Consumer and Lighting Applications 500V CoolMOS™ CE Power MOSFET The CoolMOS™ CE is a new technology platform of Infineon’s market leading high voltage power MOSFETs designed according to the revolutionary superjunction (SJ) principle. 500V CE portfolio provides all benefits of a fast switching SJ MOSFET while not sacrificing eas | Infineon 英飞凌 | | |
IPW50R190CE | N-Channel MOSFET Transistor • DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤190mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | |
IPW50R190CE | 500V CoolMOS짧 CE Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to | Infineon 英飞凌 | | |
IPW50R190CE | Metal Oxide Semiconductor Field Effect Transistor 文件：2.33448 Mbytes Page：15 Pages | Infineon 英飞凌 | | |
Metal Oxide Semiconductor Field Effect Transistor 文件：2.33448 Mbytes Page：15 Pages | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.19Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤190mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
500V CoolMOS??CE Power MOSFET 500V CoolMOS™ CE Power MOSFET The CoolMOS™ CE is a new technology platform of Infineon’s market leading high voltage power MOSFETs designed according to the revolutionary superjunction (SJ) principle. 500V CE portfolio provides all benefits of a fast switching SJ MOSFET while not sacrificing eas | Infineon 英飞凌 | | ||
500V Superjunction MOSFET for Consumer and Lighting Applications 500V CoolMOS™ CE Power MOSFET The CoolMOS™ CE is a new technology platform of Infineon’s market leading high voltage power MOSFETs designed according to the revolutionary superjunction (SJ) principle. 500V CE portfolio provides all benefits of a fast switching SJ MOSFET while not sacrificing eas | Infineon 英飞凌 | | ||
500V CoolMOS짧 CE Power Transistor 文件：977.99 Kbytes Page：13 Pages | Infineon 英飞凌 | |
IPW50R190CE产品属性
- 类型
描述
- 型号
IPW50R190CE
- 制造商
Infineon Technologies AG
- 功能描述
MOSFET N-CH 500V 18.5A TO247
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
INFINEON |
12+ |
TO-247 |
4 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON/英飞凌 |
24+ |
TO-247 |
46184 |
只做原装进口现货 |
|||
INFINEON/英飞凌 |
2450+ |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
||||
INFINEON |
NA |
185600 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
Infineon |
24+ |
TO220-3 |
17900 |
MOSFET管 |
|||
INFINEON |
24+ |
TO-247 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
Infineon(英飞凌) |
24+ |
TO-247 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
INFINEON/英飞凌 |
2407+ |
30098 |
全新原装!仓库现货,大胆开价! |
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2012-11-14
DdatasheetPDF页码索引
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