位置：首页 > IC中文资料 > IPT012N06N
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPT012N06N | OptiMOSTMPower-Transistor,60V 文件：1.02236 Mbytes Page：11 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  |   |
OptiMOSTM5Power-Transistor,60V Features •Optimizedforsynchronousrectification •100avalanchetested •Superiorthermalresistance •N-channel •175°Crated •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjointreliabilityduetoenlargedsourceinterconnection | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
MOSFET-Power,DualN-Channel60V,11.9m,42A Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
MOSFET-Power,DualN-Channel60V,11.9m,42A Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
60VSingleN-ChannelMOSFET 文件：871.91 Kbytes Page：8 Pages | PFC PFC Device Inc. |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
H-PSOF-8 |
21048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
INFINEON/英飞凌 |
24+ |
NA/ |
20904 |
原装现货,当天可交货,原型号开票 |
|||
Infineon/英飞凌 |
24+ |
PG-HSOF-8 |
25000 |
原装正品,假一赔十! |
|||
INFINEON/英飞凌 |
22+ |
HSOF8 |
4000 |
原装进口无铅现货 |
|||
Infineon/英飞凌 |
21+ |
PG-HSOF-8 |
6820 |
只做原装,质量保证 |
|||
INFINEON/英飞凌 |
24+ |
PG-HSOF-8 |
17654 |
只做原厂渠道 可追溯货源 |
|||
INFINEON |
24+ |
H-PSOF-8 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
INFINEON/英飞凌 |
23+ |
H-PSOF-8-1 |
32732 |
原装正品代理渠道价格优势 |
|||
INFINEON |
24+ |
H-PSOF-8 |
5000 |
全新原装正品,现货销售 |
|||
INFINEON/英飞凌 |
24+ |
H-PSOF-8-1 |
20828 |
全新原装现货 |
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IPT012N06N规格书下载地址
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2012-11-14
DdatasheetPDF页码索引
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