OptiMOSTM Power-Transistor, 60 V

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N 沟道功率 MOSFET

OptiMOSTM5 Power-Transistor, 60 V

Features • Optimized for synchronous rectification • 100 avalanche tested • Superior thermal resistance • N-channel • 175°C rated • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • Higher solder joint reliability due to enlarged source interconnection

MOSFET - Power, Dual N-Channel 60 V, 11.9 m, 42 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

MOSFET - Power, Dual N-Channel 60 V, 11.9 m, 42 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

60V Single N-Channel MOSFET

文件：871.91 Kbytes Page：8 Pages