位置：首页 > IC中文资料 > IPT012N06N
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPT012N06N | OptiMOSTMPower-Transistor,60V 文件：1.02236 Mbytes Page：11 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  |   |
OptiMOSTM5Power-Transistor,60V Features •Optimizedforsynchronousrectification •100avalanchetested •Superiorthermalresistance •N-channel •175°Crated •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjointreliabilityduetoenlargedsourceinterconnection | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
MOSFET-Power,DualN-Channel60V,11.9m,42A Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
MOSFET-Power,DualN-Channel60V,11.9m,42A Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
60VSingleN-ChannelMOSFET 文件：871.91 Kbytes Page：8 Pages | PFC PFC Device Inc. |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
H-PSOF-8 |
21048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
INFINEON/英飞凌 |
24+ |
NA/ |
20904 |
原装现货,当天可交货,原型号开票 |
|||
Infineon/英飞凌 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
|||
Infineon |
23+ |
PG-HSOF-8 |
15500 |
英飞凌优势渠道全系列在售 |
|||
INFINEON/英飞凌 |
25+ |
PG-HSOF-8 |
32360 |
INFINEON/英飞凌全新特价IPT012N06N即刻询购立享优惠#长期有货 |
|||
INFINEON |
24+ |
H-PSOF-8 |
5000 |
全新原装正品,现货销售 |
|||
Infineon/英飞凌 |
23+ |
PG-HSOF-8 |
12700 |
买原装认准中赛美 |
|||
INFINEON/英飞凌 |
24+ |
H-PSOF-8-1 |
20828 |
全新原装现货 |
|||
INFINEON |
24+ |
H-PSOF-8 |
8000 |
原装，正品 |
|||
Infineon/英飞凌 |
23+ |
PG-HSOF-8 |
25630 |
原装正品 |
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IPT012N06N规格书下载地址
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2012-11-14
DdatasheetPDF页码索引
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